CS740A0H Specs and Replacement
Type Designator: CS740A0H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO263
CS740A0H substitution
- MOSFET ⓘ Cross-Reference Search
CS740A0H datasheet
cs740a8h.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS740 A8H General Description VDSS 400 V CS740 A8H, the silicon N-channel Enhanced ID 10 A PD (TC=25 ) 120 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ... See More ⇒
jcs740vc jcs740rc jcs740sc jcs740bc jcs740cc jcs740fc.pdf
N R N-CHANNEL MOSFET JCS740C MAIN CHARACTERISTICS Package 10 A ID 400 V VDSS Rdson 0.54 @Vgs=10V 19.7nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒
cs740f a9h.pdf
Silicon N-Channel Power MOSFET R CS740F A9H General Description VDSS 400 V CS740F A9H, the silicon N-channel Enhanced ID 10 A PD (TC=25 ) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.36 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
Detailed specifications: NCE2305A, NCE3007S, MTD6P10ET4, MMSF7P03HDR2G, CS730A8H, SPN3400S23RG, CS730FA9H, CS730FA9RD, IRF520, CS120N08A8, SSC8033GS6, SSC8035GS6, CS7N60A3R, CS7N60A4R, NCE0108AS, NTF5P03T3G, NTGS3443T1G
Keywords - CS740A0H MOSFET specs
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History: 2SK1403A | FHP3205
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