CS7N60A4R Specs and Replacement
Type Designator: CS7N60A4R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ -
Output Capacitance: 96 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO252
- MOSFET ⓘ Cross-Reference Search
CS7N60A4R datasheet
7.1. Size:348K wuxi china
cs7n60a7hd.pdf 
Silicon N-Channel Power MOSFET R CS7N60 A7HD General Description VDSS 600 V CS7N60 A7HD, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
7.2. Size:352K wuxi china
cs7n60a8hd.pdf
Silicon N-Channel Power MOSFET R CS7N60 A8HD General Description VDSS 600 V CS7N60 A8HD, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
8.2. Size:904K jilin sino
jcs7n60bb jcs7n60sb jcs7n60cb jcs7n60fb.pdf
N R N-CHANNEL MOSFET JCS7N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L... See More ⇒
8.4. Size:625K crhj
cs7n60f a9hdy.pdf
Silicon N-Channel Power MOSFET R CS7N60F A9HDY General Description VDSS 600 V CS7N60F A9HDY, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
8.5. Size:352K crhj
cs7n60 a8hd.pdf
Silicon N-Channel Power MOSFET R CS7N60 A8HD General Description VDSS 600 V CS7N60 A8HD, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
8.6. Size:348K crhj
cs7n60 a7hd.pdf
Silicon N-Channel Power MOSFET R CS7N60 A7HD General Description VDSS 600 V CS7N60 A7HD, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow... See More ⇒
8.7. Size:279K crhj
cs7n60 a3r.pdf
Silicon N-Channel Power MOSFET R CS7N60 A3R General Description VDSS 600 V CS7N60 A3R, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒
8.8. Size:351K crhj
cs7n60f a9hd.pdf
Silicon N-Channel Power MOSFET R CS7N60F A9HD General Description VDSS 600 V CS7N60F A9HD, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various ... See More ⇒
8.9. Size:286K crhj
cs7n60 a4r.pdf
Silicon N-Channel Power MOSFET R CS7N60 A4R General Description VDSS 600 V CS7N60 A4R, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒
8.10. Size:269K crhj
cs7n60f a9r.pdf
Silicon N-Channel Power MOSFET R CS7N60F A9R General Description VDSS 600 V CS7N60F A9R, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.0 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒
8.11. Size:3164K citcorp
cs7n60fa9hdy.pdf
CS7N60FA9HDY 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S E... See More ⇒
8.12. Size:2737K citcorp
cs7n60fa9hd.pdf
CS7N60FA9HD 600V Silicon N-Channel Power MOSFET Features Outline Fast switching. TO-220F ESD improved capability. 0.189(4.80) 0.173(4.40) Low gate charge. 0.409(10.40) 0.378(9.60) 0.114(2.90) Low reverse transfer capacitances. 0.098(2.50) 100% single pulse avalanche energy test. 0.638(16.20) 0.606(15.40) Marking code Mechanical data G D S Ep... See More ⇒
8.13. Size:209K foshan
cs7n60f.pdf
BRF7N60(CS7N60F) N-Channel MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 ) ... See More ⇒
8.14. Size:326K wuxi china
cs7n60fa9hd.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS7N60F A9HD General Description VDSS 600 V CS7N60F A9HD, the silicon N-channel Enhanced ID 7 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor... See More ⇒
8.15. Size:459K convert
cs7n60cf cs7n60cp cs7n60cu cs7n60cd.pdf
nvert CS7N60CF,CS7N60CP,CS7N60CU,CS7N60CD Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS7N60CF TO... See More ⇒
8.16. Size:646K convert
cs7n60f cs7n60p.pdf
CS7N60F,CS7N60P nvert Suzhou Convert Semiconductor Co ., Ltd. 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS7N60F TO-220F CS7N60F CS7N60... See More ⇒
Detailed specifications: SPN3400S23RG, CS730FA9H, CS730FA9RD, CS740A0H, CS120N08A8, SSC8033GS6, SSC8035GS6, CS7N60A3R, 8N60, NCE0108AS, NTF5P03T3G, NTGS3443T1G, NTGS4111PT, CS7N60FA9R, SSM3K335, CS7N65A3R, SQ2348ES-T1
Keywords - CS7N60A4R MOSFET specs
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CS7N60A4R replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
