SSM3K335 Specs and Replacement
Type Designator: SSM3K335
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOT23
SSM3K335 substitution
- MOSFET ⓘ Cross-Reference Search
SSM3K335 datasheet
ssm3k335.pdf
SSM3K335 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G... See More ⇒
ssm3k336r.pdf
SSM3K336R MOSFETs Silicon N-Channel MOS SSM3K336R SSM3K336R SSM3K336R SSM3K336R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 4.5 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 95 m (max) (@VGS = 10 V) RDS(ON) = 140 m (max) (@VG... See More ⇒
ssm3k339r.pdf
SSM3K339R MOSFETs Silicon N-Channel MOS SSM3K339R SSM3K339R SSM3K339R SSM3K339R 1. Applications 1. Applications 1. Applications 1. Applications Power Management Switches DC-DC Converters 2. Features 2. Features 2. Features 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 145 m (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155 ... See More ⇒
Detailed specifications: SSC8035GS6, CS7N60A3R, CS7N60A4R, NCE0108AS, NTF5P03T3G, NTGS3443T1G, NTGS4111PT, CS7N60FA9R, IRF1405, CS7N65A3R, SQ2348ES-T1, CS7N65A4R, STD2NB60T4, CS7N65FA9R, SI4848DY-T1, SI4848DY-T1-E3, SI4850DY-T1
Keywords - SSM3K335 MOSFET specs
SSM3K335 cross reference
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