CS8N50A8R MOSFET Datasheet: N-Ch, 500V, 8A. Full specification with pinout and replacement list

CS8N50A8R Specs and Replacement

Type Designator: CS8N50A8R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO220AB

CS8N50A8R substitution

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CS8N50A8R datasheet

8.1. Size:270K crhj
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Silicon N-Channel Power MOSFET R CS8N50 A8R General Description VDSS 500 V CS8N50 A8R, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 100 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power ... See More ⇒

8.2. Size:274K crhj
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Silicon N-Channel Power MOSFET R CS8N50F A9R General Description VDSS 500 V CS8N50F A9R, the silicon N-channel Enhanced ID 8 A PD(TC=25 ) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.7 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒

Detailed specifications: STC5NF20V, SM4305PSKC, SM4307PSKC-TRG, SQ9945BEY-T1-GE3, SQD40N06-14, SUD50P04-09L-E3, SUD50P06-15L-GE3, CS8N25FA9, IRF740, CS8N50FA9R, CS8N60A8D, VB1101M, CS8N60ARD, TP0610K-T1, TPC8103, TPC8104, TK40P04M