UTM4052L Datasheet and Replacement
Type Designator: UTM4052L
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 4.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO8
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UTM4052L Datasheet (PDF)
utm4052l.pdf

UTM4052Lwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS
utm4052l-s08-r utm4052g-s08-r utm4052l-tn4-r utm4052g-tn4-r utm4052l-tn4-t utm4052g-tn4-t.pdf

UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) FEATURES SOP-8* N-Channel: 40V/7.5A RDS(ON) = 30 m (typ.) @VGS =10V RDS(ON) = 46 m(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 m(typ.) @ VGS= -10V 1RDS(ON) = 52 m(typ.) @ VGS= -5V * Super High Dense Cell Design TO-252-4* Reliable and Rugged SYMBO
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: STP656F | HY1908S | DH3205A | FIR6N40FG | FHF7N60A | AO6800 | FQU2N80TU
Keywords - UTM4052L MOSFET datasheet
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History: STP656F | HY1908S | DH3205A | FIR6N40FG | FHF7N60A | AO6800 | FQU2N80TU



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