CS9N90_ANHD MOSFET. Datasheet pdf. Equivalent
Type Designator: CS9N90_ANHD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 150 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 185 pF
Maximum Drain-Source On-State Resistance (Rds): 1.3 Ohm
Package: TO3PN
CS9N90_ANHD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS9N90_ANHD Datasheet (PDF)
1.1. cs9n90 anhd.pdf 
Size:785K _crhj
Silicon N-Channel Power MOSFET R ○ CS9N90 ANHD General Description： VDSS 900 V CS9N90 ANHD, the silicon N-channel Enhanced ID 9 A PD(TC=25℃) 150 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.95 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow
4.1. cs9n90f a9d.pdf Size:771K _crhj
Silicon N-Channel Power MOSFET R ○ CS9N90F A9D General Description： VDSS 900 V CS9N90F A9HD the silicon N-channel Enhanced ID 9 A PD(TC=25℃) 60 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe
Datasheet: CS8N80_A8H , CS8N80F_A9D , CS8N80F_A9H , CS8N90_A8 , CS8N90F_A9 , CS8N90F_A9HD , CS90N03_B3 , CS90N03_B4 , IRFP450 , CS9N90F_A9D , CSZ44V-1 , AO4600 , AO4604 , AO4609 , AO4614A , AO4624 , SI4558DY .
