All MOSFET. UTM4052L Datasheet

 

UTM4052L Datasheet and Replacement


   Type Designator: UTM4052L
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SO8
 

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UTM4052L Datasheet (PDF)

 ..1. Size:1606K  cn vbsemi
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UTM4052L

UTM4052Lwww.VBsemi.twN- and P-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFETN-Channel 60 6 nC0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested0.050 at VGS = - 10 V - 4.9APPLICATIONSP-Channel - 60 8 nC0.060 at VGS

 0.1. Size:434K  utc
 utm4052l-s08-r utm4052g-s08-r utm4052l-tn4-r utm4052g-tn4-r utm4052l-tn4-t utm4052g-tn4-t.pdf pdf_icon

UTM4052L

UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) FEATURES SOP-8* N-Channel: 40V/7.5A RDS(ON) = 30 m (typ.) @VGS =10V RDS(ON) = 46 m(typ.) @ VGS= 5V * P-Channel: -40V/-6A RDS(ON) = 45 m(typ.) @ VGS= -10V 1RDS(ON) = 52 m(typ.) @ VGS= -5V * Super High Dense Cell Design TO-252-4* Reliable and Rugged SYMBO

Datasheet: CS8N80A8H , VB1330 , CS8N80FA9H , CS8N90A8 , CS8N90FA9 , VB162K , CS90N03B3 , UT9435G , IRFP250N , UTM6016G , CSZ44V-1 , AO4600 , AO4604 , AO4609 , AO4614A , AO4624 , SI4558DY .

History: SCT2750NY | IRF7306QPBF

Keywords - UTM4052L MOSFET datasheet

 UTM4052L cross reference
 UTM4052L equivalent finder
 UTM4052L lookup
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