UTM4052L Specs and Replacement
Type Designator: UTM4052L
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SO8
UTM4052L substitution
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UTM4052L datasheet
utm4052l.pdf
UTM4052L www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.028 at VGS = 10 V 5.3 TrenchFET Power MOSFET N-Channel 60 6 nC 0.031 at VGS = 4.5 V 4.7 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 4.9 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS ... See More ⇒
utm4052l-s08-r utm4052g-s08-r utm4052l-tn4-r utm4052g-tn4-r utm4052l-tn4-t utm4052g-tn4-t.pdf
UNISONIC TECHNOLOGIES CO., LTD UTM4052 Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) FEATURES SOP-8 * N-Channel 40V/7.5A RDS(ON) = 30 m (typ.) @VGS =10V RDS(ON) = 46 m (typ.) @ VGS= 5V * P-Channel -40V/-6A RDS(ON) = 45 m (typ.) @ VGS= -10V 1 RDS(ON) = 52 m (typ.) @ VGS= -5V * Super High Dense Cell Design TO-252-4 * Reliable and Rugged SYMBO... See More ⇒
Detailed specifications: CS8N80A8H, VB1330, CS8N80FA9H, CS8N90A8, CS8N90FA9, VB162K, CS90N03B3, UT9435G, IRFB4115, UTM6016G, CSZ44V-1, AO4600, AO4604, AO4609, AO4614A, AO4624, SI4558DY
Keywords - UTM4052L MOSFET specs
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History: SI4953DY | BR100N03 | IXFN25N90 | IXFN26N90 | KI8810T | KI8810DY
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