All MOSFET. AO4824L Datasheet

 

AO4824L MOSFET. Datasheet pdf. Equivalent

Type Designator: AO4824L

SMD Transistor Code: 4824L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 8.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 4.4 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm

Package: SOP8

AO4824L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO4824L Datasheet (PDF)

1.1. ao4824l.pdf Size:1696K _kexin

AO4824L
AO4824L

SMD Type MOSFET Dual N-Channel MOSFET AO4824L (KO4824L) SOP-8 Unit:mm ■ Features N-Channel 1 ● VDS (V) = 30V 1.50 0.15 ● ID = 8.5A (VGS = 10V) ● RDS(ON) < 17mΩ (VGS = 10V) 1 S2 5 D1 ● RDS(ON) < 27mΩ (VGS = 4.5V) 6 D1 2 G2 7 D2 3 S1 N-Channel 2 8 D2 4 G1 ● VDS (V) = 30V ● ID = 9.8A (VGS = 10V) ● RDS(ON) < 13mΩ (VGS = 10V) ● RDS(ON) < 15

5.1. ao4826.pdf Size:164K _aosemi

AO4824L
AO4824L

AO4826 60V Dual N-Channel MOSFET General Description Product Summary The AO4826 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. This ID = 6.3A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) < 25mΩ (VGS = 10V) applications. RDS(ON) < 30mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom

5.2. ao4821.pdf Size:261K _aosemi

AO4824L
AO4824L

AO4821 12V Dual P-Channel MOSFET General Description Product Summary VDS -12V The AO4821 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -9A voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=-4.5V) < 19mΩ a load switch. RDS(ON) (at VGS =-2.5V) < 24mΩ RDS(ON) (at VGS =-1.8V) < 30

 5.3. ao4822.pdf Size:299K _aosemi

AO4824L
AO4824L

AO4822 30V Dual N-channel MOSFET General Description Product Summary VDS 30V The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ID (at VGS=10V) 8A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V) <19mΩ RDS(ON) (at VGS = 4.5V) < 26mΩ ESD Protected 100% UIS Tested 100% Rg Tested D D D

5.4. ao4822a.pdf Size:299K _aosemi

AO4824L
AO4824L

AO4822A 30V Dual N-channel MOSFET General Description Product Summary VDS 30V The AO4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V) <19mΩ applications. RDS(ON) (at VGS = 4.5V) < 26mΩ ESD Protected 100% UIS Tested 100% Rg Tested D D

 5.5. ao4828.pdf Size:168K _aosemi

AO4824L
AO4824L

AO4828 60V Dual N-Channel MOSFET General Description Features The AO4828 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. This ID = 4.5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) < 56mΩ (VGS = 10V) applications. RDS(ON) < 77mΩ (VGS = 4.5V) 100% UIS tested 100% Rg tested SOIC-8 D D 1 2 Top View Bott

5.6. ao4826.pdf Size:1278K _kexin

AO4824L
AO4824L

SMD Type MOSFET Dual N-Channel MOSFET AO4826 (KO4826) SOP-8 Unit:mm ■ Features ● VDS (V) = 60V ● ID = 6.3A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 25mΩ (VGS = 10V) ● RDS(ON) < 30mΩ (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D1 G2 G1 S2 S1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Ga

5.7. ao4821.pdf Size:1372K _kexin

AO4824L
AO4824L

SMD Type MOSFET Dual P-Channel MOSFET AO4821 (KO4821) SOP-8 Unit:mm ■ Features ● VDS (V) = -12V ● ID = -9 A (VGS = -4.5V) 1.50 0.15 ● RDS(ON) < 19mΩ (VGS = -4.5V) ● RDS(ON) < 24mΩ (VGS = -2.5V) 1 S2 5 D1 ● RDS(ON) < 30mΩ (VGS = -1.8V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 Rg Rg G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbo

5.8. ao4822.pdf Size:2544K _kexin

AO4824L
AO4824L

SMD Type MOSFET Dual N-Channel MOSFET AO4822 (KO4822) SOP-8 Unit:mm ■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 19mΩ (VGS = 10V) ● RDS(ON) < 26mΩ (VGS = 4.5V) 1 S2 5 D1 ● ESD Rating: 2KV HBM 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source V

5.9. ao4822a.pdf Size:2312K _kexin

AO4824L
AO4824L

SMD Type MOSFET Dual N-Channel MOSFET AO4822A (KO4822A) SOP-8 Unit:mm ■ Features ● VDS (V) = 30V ● ID = 8A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 19mΩ (VGS = 10V) ● RDS(ON) < 26mΩ (VGS = 4.5V) 1 S2 5 D1 ● ESD Rating: 2KV HBM 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source

5.10. ao4828.pdf Size:1032K _kexin

AO4824L
AO4824L

SMD Type MOSFET Dual N-Channel MOSFET AO4828 (KO4828) SOP-8 Unit:mm ■ Features ● VDS (V) = 60V ● ID = 4.5A (VGS = 10V) 1.50 0.15 ● RDS(ON) < 56mΩ (VGS = 10V) ● RDS(ON) < 77mΩ (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D D 1 2 G1 G2 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Ga

Datasheet: AO4624 , SI4558DY , SI5504DC , SI5513CD , SIA517DJ , SI4953ADY , SI1903DL , SI4953DY , IRF4905 , AO4900 , AO4906 , AO4912 , AO4918 , AO6804 , KI8205A , KI8205T , KI8810DY .

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