AO4824L Specs and Replacement
Type Designator: AO4824L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.4 nS
Cossⓘ -
Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SOP8
- MOSFET ⓘ Cross-Reference Search
AO4824L datasheet
..1. Size:1696K kexin
ao4824l.pdf 
SMD Type MOSFET Dual N-Channel MOSFET AO4824L (KO4824L) SOP-8 Unit mm Features N-Channel 1 VDS (V) = 30V 1.50 0.15 ID = 8.5A (VGS = 10V) RDS(ON) 17m (VGS = 10V) 1 S2 5 D1 RDS(ON) 27m (VGS = 4.5V) 6 D1 2 G2 7 D2 3 S1 N-Channel 2 8 D2 4 G1 VDS (V) = 30V ID = 9.8A (VGS = 10V) RDS(ON) 13m (VGS = 10V) RDS(ON) 15... See More ⇒
9.1. Size:299K aosemi
ao4822a.pdf
AO4822A 30V Dual N-channel MOSFET General Description Product Summary VDS 30V The AO4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 8A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V) ... See More ⇒
9.2. Size:168K aosemi
ao4828.pdf
AO4828 60V Dual N-Channel MOSFET General Description Features The AO4828 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. This ID = 4.5A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒
9.3. Size:299K aosemi
ao4822.pdf
AO4822 30V Dual N-channel MOSFET General Description Product Summary VDS 30V The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ID (at VGS=10V) 8A suitable for use as a load switch or in PWM applications. RDS(ON) (at VGS=10V) ... See More ⇒
9.4. Size:164K aosemi
ao4826.pdf
AO4826 60V Dual N-Channel MOSFET General Description Product Summary The AO4826 uses advanced trench technology to VDS (V) = 60V provide excellent RDS(ON) and low gate charge. This ID = 6.3A (VGS = 10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒
9.5. Size:261K aosemi
ao4821.pdf
AO4821 12V Dual P-Channel MOSFET General Description Product Summary VDS -12V The AO4821 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -9A voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=-4.5V) ... See More ⇒
9.6. Size:2312K kexin
ao4822a.pdf
SMD Type MOSFET Dual N-Channel MOSFET AO4822A (KO4822A) SOP-8 Unit mm Features VDS (V) = 30V ID = 8A (VGS = 10V) 1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V) 1 S2 5 D1 ESD Rating 2KV HBM 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source... See More ⇒
9.7. Size:1032K kexin
ao4828.pdf
SMD Type MOSFET Dual N-Channel MOSFET AO4828 (KO4828) SOP-8 Unit mm Features VDS (V) = 60V ID = 4.5A (VGS = 10V) 1.50 0.15 RDS(ON) 56m (VGS = 10V) RDS(ON) 77m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D D 1 2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Ga... See More ⇒
9.8. Size:2544K kexin
ao4822.pdf
SMD Type MOSFET Dual N-Channel MOSFET AO4822 (KO4822) SOP-8 Unit mm Features VDS (V) = 30V ID = 8A (VGS = 10V) 1.50 0.15 RDS(ON) 19m (VGS = 10V) RDS(ON) 26m (VGS = 4.5V) 1 S2 5 D1 ESD Rating 2KV HBM 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source V... See More ⇒
9.9. Size:1278K kexin
ao4826.pdf
SMD Type MOSFET Dual N-Channel MOSFET AO4826 (KO4826) SOP-8 Unit mm Features VDS (V) = 60V ID = 6.3A (VGS = 10V) 1.50 0.15 RDS(ON) 25m (VGS = 10V) RDS(ON) 30m (VGS = 4.5V) 1 S2 5 D1 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D2 D1 G2 G1 S2 S1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Ga... See More ⇒
9.10. Size:1372K kexin
ao4821.pdf
SMD Type MOSFET Dual P-Channel MOSFET AO4821 (KO4821) SOP-8 Unit mm Features VDS (V) = -12V ID = -9 A (VGS = -4.5V) 1.50 0.15 RDS(ON) 19m (VGS = -4.5V) RDS(ON) 24m (VGS = -2.5V) 1 S2 5 D1 RDS(ON) 30m (VGS = -1.8V) 6 D1 2 G2 7 D2 3 S1 8 D2 4 G1 D1 D2 Rg Rg G1 G2 S1 S2 Absolute Maximum Ratings Ta = 25 Parameter Symbo... See More ⇒
9.11. Size:906K cn vbsemi
ao4826.pdf
AO4826 www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel M... See More ⇒
Detailed specifications: AO4624
, SI4558DY
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, SI1903DL
, SI4953DY
, AO3401
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.
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