IRF645 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF645
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 39 nC
trⓘ - Rise Time: 67 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
Package: TO220AB
IRF645 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF645 Datasheet (PDF)
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irf640n.pdf
PD - 94006IRF640NIRF640NSIRF640NL Advanced Process TechnologyHEXFET Power MOSFET Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 200V Fast Switching Fully Avalanche RatedRDS(on) = 0.15 Ease of ParallelingG Simple Drive RequirementsDescriptionID = 18AFifth Generation HEXFET Power MOSFETs from SInternational Rectifier utilize advanced processi
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irf640s.pdf
PD -90902BIRF640S/LHEXFET Power MOSFET Surface Mount (IRF640S)D Low-profile through-hole (IRF640L)VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt RatingRDS(on) = 0.18 150C Operating TemperatureG Fast SwitchingID = 18A Fully Avalanche RatedSDescriptionThird Generation HEXFETs from International Rectifier providethe designer with the best co
irf644.pdf
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irf640 s 1.pdf
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irf640fp.pdf
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irf644b irfs644b.pdf
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irf644b.pdf
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irf644a.pdf
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Va
irf640a.pdf
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irf644 sihf644.pdf
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irf644spbf sihf644s.pdf
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RoHS IRF640 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(18A, 200Volts)DESCRIPTION The Nell IRF640 are N-channel enhancement mode silicon gate power field effect transistors.DD They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and relia
irf640.pdf
IRF640N-Channel MOSFET TransistorFEATURESStatic drain-source on-resistance:TO-220RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)
irf640n.pdf
IRF640NN-Ch 200V Fast Switching MOSFETs Product Summary Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 200V 170m 18A technology Description TO220 Pin Configuration The IRF640N is the highest performance trenchN-ch MOSFETs with extreme high cell density,which provide excel
irf640p.pdf
IRF640Pwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.110 at VGS = 10 V2 0 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Primary Side SwitchDDRAIN connected to TAB GG D S Top ViewSN-Chan
irf640n.pdf
isc N-Channel MOSFET Transistor IRF640NIIRF640NFEATURESStatic drain-source on-resistance:RDS(on) 150mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION Efficient and reliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T
irf640ns.pdf
Isc N-Channel MOSFET Transistor IRF640NSFEATURESWith TO-263( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)a
irf640.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION Drain Current ID= 18A@ TC=25 Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.18(Max) Fast Switching Speed Low Drive Requirement APPLICATIONS Designed for low voltage, high speed power switching applications suc
irf640nl.pdf
Isc N-Channel MOSFET Transistor IRF640NLFEATURESWith TO-262 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR
Datasheet: IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , IRF644 , IRF644A , IRF644S , IRF730 , IRF646 , IRF650A , IRF654A , IRF710 , IRF710A , IRF710S , IRF711 , IRF712 .
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