AO4705
MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4705
Marking Code: 4705
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 37.2
nC
trⓘ - Rise Time: 8.2
nS
Cossⓘ -
Output Capacitance: 503
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package:
SOP8
AO4705
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4705
Datasheet (PDF)
..1. Size:1757K kexin
ao4705.pdf 
SMD Type MOSFET P-Channel MOSFETAO4705 (KO4705)SOP-8 Unit:mm Features VDS (V) = -30V ID = -10 A (VGS = -10V) 0.151.50 RDS(ON) 14m (VGS = 20V)5 D/K RDS(ON) 16m (VGS = -10V) 1 A6 D/K2 S VDS (V) = 30V, IF = 5A, VF
9.1. Size:137K aosemi
ao4702.pdf
AO4702N-Channel Enhancement Mode Field Effect Transistor with Schottky DiodeGeneral DescriptionFeaturesThe AO4702 uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON) and low gate charge. A Schottky Diode is ID = 11A (VGS = 10V)packaged in parallel to improve device performance in RDS(ON)
9.2. Size:207K aosemi
ao4706.pdf
AO470630V N-Channel MOSFETSRFET TM General Description Product SummaryTMSRFET The AO4706 uses advanced trenchVDS (V) = 30Vtechnology with a monolithically integrated SchottkyID =16.5A (VGS = 10V)diode to provide excellent RDS(ON),and low gatecharge. This device is suitable for use as a low side RDS(ON)
9.3. Size:191K aosemi
ao4708.pdf
AO470830V N-Channel MOSFETSRFET TM General Description Product SummaryTMSRFET AO4708 uses advanced trench technologyVDS (V) = 30Vwith a monolithically integrated Schottky diode toID =15A (VGS = 10V)provide excellent RDS(ON),and low gate charge. Thisdevice is suitable for use as a low side FET in SMPS, RDS(ON)
9.4. Size:1573K kexin
ao4702.pdf
SMD Type MOSFET N-Channel MOSFETAO4702 (KO4702)SOP-8 Unit:mm Features VDS (V) = 30V ID = 11 A (VGS = 10V) 1.50 0.15 RDS(ON) 16m (VGS = 10V) RDS(ON) 25m (VGS = 4.5V)1 S/A 8 D/K2 S/A 7 D/K VDS (V) = 30V, IF = 3A, VF
9.5. Size:1903K kexin
ao4706.pdf
SMD Type MOSFET N-Channel MOSFETAO4706 (KO4706)SOP-8 Unit:mm Features VDS (V) = 30V ID = 16.5 A (VGS = 10V)1.50 0.15 RDS(ON) 6.8m (VGS = 10V) RDS(ON) 8.2m (VGS = 4.5V)1 Source 5 DrainSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode 6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25
9.6. Size:1565K kexin
ao4704.pdf
SMD Type MOSFET N-Channel MOSFETAO4704 (KO4704)SOP-8 Unit:mm Features VDS (V) = 30V ID = 13 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V)1.50 0.15 RDS(ON) 13m (VGS = 4.5V) VDS (V) = 30V, IF = 3A, VF
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