All MOSFET. IRF650A Datasheet

 

IRF650A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF650A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 95 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO220

 IRF650A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF650A Datasheet (PDF)

 ..1. Size:775K  samsung
 irf650a.pdf

IRF650A IRF650A

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.085 Rugged Gate Oxide Technology Lower Input CapacitanceID = 28 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

 0.1. Size:2125K  cn vbsemi
 irf650ap.pdf

IRF650A IRF650A

IRF650APwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHS0.060 at VGS = 10 V COMPLIANT 40 New Low Thermal Resistance Package200 950.070 at VGS = 6 V38.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-220AB IndustrialDGG D

 8.1. Size:898K  fairchild semi
 irf650b.pdf

IRF650A IRF650A

IRF650B / IRFS650B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 28A, 200V, RDS(on) = 0.085 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 75 pF)This advanced technology has been especially tailored to Fast switc

 9.1. Size:867K  fairchild semi
 irf654b.pdf

IRF650A IRF650A

November 2001IRF654B/IRFS654B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21A, 250V, RDS(on) = 0.14 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 95 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to

 9.2. Size:938K  samsung
 irf654a.pdf

IRF650A IRF650A

Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input CapacitanceID = 21 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.108 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value UnitsVD

Datasheet: IRF641 , IRF642 , IRF643 , IRF644 , IRF644A , IRF644S , IRF645 , IRF646 , IRF9540N , IRF654A , IRF710 , IRF710A , IRF710S , IRF711 , IRF712 , IRF713 , IRF720 .

 

 
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