KO3415A MOSFET. Datasheet pdf. Equivalent
Type Designator: KO3415A
Marking Code: 3415A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
KO3415A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KO3415A Datasheet (PDF)
ko3415a.pdf
SMD Type MOSFETTransistorsP-Channel MOSFET KO3415ASOT-23 Features Unit: mm+0.12.9 -0.1+0.1 VDS (V) =-12V 0.4-0.13 ID =-4.1 A (VGS =-4.5V) RDS(ON) 45m (VGS =-4.5V) RDS(ON) 60m (VGS =-2.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating U
ao3415 ko3415.pdf
SMD Type MOSFETP-Channel MOSFETAO3415 (KO3415)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) =-20V ID =-5 A (VGS =-4.5V) RDS(ON) 43m (VGS =-4.5V)1 2 RDS(ON) 55m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.2 RDS(ON) 75m (VGS =-1.8V) RDS(ON) 100m (VGS =-1.5V)1. GateD2. Source3
ko3416.pdf
SMDTypee ans istICDIP Type TrMOSFETSMD TypeDIP TySMD TyppeeDIP TyppeeSMD Typ CSMD Type IorSMDType MOSFETTySMDDIP Type ICProduct specificationKO3416SOT-23-3Unit: mm+0.22.9-0.20.4+0.1 Features -0.053 VDS (V) = 20V ID = 6.5 A RDS(ON) 22m (VGS = 4.5V)12 RDS(ON) 26m (VGS = 2.5V)+0.10.95-0.1 0.1+0.05-0.01+0.2
ao3416 ko3416.pdf
SMD Type MOSFETN-Channel Enhancement MOSFETAO3416 (KO3416) Features VDS (V) = 20V3 ID = 6.5 A (VGS = 4.5V) RDS(ON) 22m (VGS = 4.5V) RDS(ON) 26m (VGS = 2.5V)12D D RDS(ON) 34m (VGS = 1.8V) GG SS Absolute Maximum Ratings Ta
ko3413.pdf
SMD Type MOSFETP-Channel Enhancement Mode Field Effect TransistorKO3413SOT-23Unit: mm Features+0.12.9-0.1+0.10.4-0.1 VDS (V) = -20V3 ID = -3 A RDS(ON) 97m (VGS = -4.5V) RDS(ON) 130m (VGS = -2.5V) 1 2+0.1+0.050.95-0.1 0.1-0.01D RDS(ON) 190m (VGS = -1.8V) +0.11.9-0.11.Base1. Gate2.Emitter2. SourceG 3. Dr
ko3414.pdf
SMD Type ICSMD Type MOSFETN-Channel Enhancement ModeField Effect TransistorKO3414(AO3414)SOT-23Unit: mm+0.12.9-0.1+0.1Features 0.4-0.13VDS (V) = 20VID =4.2A(VGS=4.5V)RDS(ON) 50m (VGS =4.5V)12+0.1+0.05RDS(ON) 63m (VGS =2.5V)0.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 87m (VGS =1.8V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximu
ko3419.pdf
SMD Type ICSMD Type MOSFETP-Channel Enhancement ModeField Effect TransistorKO3419(AO3419)SOT-23Unit: mm+0.12.9-0.1Features+0.10.4-0.1VDS (V) = -20V3ID =-3.5ARDS(ON) 75m (VGS = -10V)12RDS(ON) 95m (VGS = -4.5V)+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1RDS(ON) 145m (VGS = -2.5V)1.Base1. Gate2.Emitter2. Source3. Drain3.collectorAbsolute Maximum
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: APT32F120J | APT5010LVR | BL3N100E-A | 2N6793 | 2N7000RLRMG | IRFSL4020PBF | WMK90R260S
History: APT32F120J | APT5010LVR | BL3N100E-A | 2N6793 | 2N7000RLRMG | IRFSL4020PBF | WMK90R260S
LIST
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