SI2301BDS Datasheet. Specs and Replacement

Type Designator: SI2301BDS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOT23

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SI2301BDS datasheet

 ..1. Size:184K  vishay
 si2301bds.pdf pdf_icon

SI2301BDS

Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( ) ID (A)b Pb-free 0.100 at VGS = - 4.5 V Available - 2.4 - 20 0.150 at VGS = - 2.5 V RoHS* - 2.0 COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301 BDS (L1)* * Marking Code Ordering Information Si2301BDS-T1 Si2301BDS-T1-E3 (Lead (Pb)... See More ⇒

 ..2. Size:1887K  kexin
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SI2301BDS

SMD Type MOSFET P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) SOT-23 Unit mm Features +0.1 2.9 -0.1 0.4+0.1 -0.1 VDS (V) =-20V 3 RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Stea... See More ⇒

 0.1. Size:1943K  kexin
 si2301bds-3.pdf pdf_icon

SI2301BDS

SMD Type MOSFET P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) =-20V RDS(ON) 100m (VGS =-4.5V) RDS(ON) 150m (VGS =-2.5V) 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 ... See More ⇒

 0.2. Size:866K  cn vbsemi
 si2301bds-t1-ge3.pdf pdf_icon

SI2301BDS

SI2301BDS-T1-GE3 www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICA... See More ⇒

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Detailed specifications: KX5P04DY, KX6P02, KX9435, KXF2955, NDT12P20, NDT40P04, NTMS10P02R2, NTR4101P, IRF3205, IXFP18N65X2, SI2303BDS, SI2303DS, SI2305DS, SI2307BDS, SI2307DS, SI2315BDS, SI2319DS

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