All MOSFET. SI9435DY Datasheet

 

SI9435DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI9435DY
   Marking Code: 9435
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 306 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOP8

 SI9435DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI9435DY Datasheet (PDF)

 ..1. Size:66K  vishay
 si9435dy.pdf

SI9435DY SI9435DY

 ..2. Size:1809K  kexin
 si9435dy.pdf

SI9435DY SI9435DY

SMD Type MOSFETP-Channel MOSFETSI9435DYSOP-8 Features VDS (V) =-30V ID =-5.3 A (VGS =-10V)1.50 0.15 RDS(ON) 50m (VGS =-10V) RDS(ON) 80m (VGS =-4.5V) Fast switching speed1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 Gate5 46 37 28 1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-

 0.1. Size:846K  cn vbsemi
 si9435dy-t1.pdf

SI9435DY SI9435DY

SI9435DY-T1www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5DT

 8.1. Size:241K  vishay
 si9435bdy.pdf

SI9435DY SI9435DY

 8.2. Size:1669K  kexin
 si9435bdy.pdf

SI9435DY SI9435DY

SMD Type ICSMD Type MOSFETP-Channel Enhancement MOSFET SI9435BDY (KI9435BDY)SOP-8 Features VDSS = -30V ID = -5.7A (VGS = -10V) RDS(ON) = 42 m @ VGS = -10 V1.50 0.15 RDS(ON) = 70 m @ VGS = -4.5 VSS D1 8GS D2 7S D3 6G D4 5DP-Channel MOSFET Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltag

 8.3. Size:3139K  cn szxunrui
 si9435.pdf

SI9435DY SI9435DY

SOP-8 Plastic-Encapsulate MOSFETS SI9435P-Channel Enhancement Mode Power MOSFET SOP-8Description SD1 8The SI9435 uses advanced trench technology to provide S D2 7excellent RDS(ON), low gate charge and operation with gate SD3 6G D4 5voltages as low as 4.5V. Top ViewEquivalent Cir cuitGeneral Features S VDS = -30V = -4.2A RDS(ON)

 8.4. Size:806K  cn vbsemi
 si9435bdy-t1-e3.pdf

SI9435DY SI9435DY

SI9435BDY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.042 at VGS = - 10 V - 5.8 TrenchFET Power MOSFET0.055 at VGS = - 6 V - 30 - 5.0 Compliant to RoHS Directive 2002/95/EC0.060 at VGS = - 4.5 V - 4.4SSO-8GSD1 8S D2 73 6SDG D4 5

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History: VBM1151N | IRL3803 | IRL3803L

 

 
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