IRF711 MOSFET. Datasheet pdf. Equivalent

PD - 93944CIRF7103QAUTOMOTIVE MOSFETTypical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection)))) Power Doors, Windows & Seats VDSS RDS(on) max (m) IDBenefits 50V 130@VGS = 10V 3.0A Advanced Process Technology200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature R

AUTOMOTIVE GRADEAUIRF7103QHEXFET Power MOSFETFeaturesl Advanced Planar Technologyl Dual N Channel MOSFET1 8l Low On-Resistance S1 D1V(BR)DSS50V2 7l Dynamic dV/dT Rating G1 D13 6l 175C Operating TemperatureS2 D2RDS(on) max.130m4 5l Fast SwitchingG2 D2l Lead-Free, RoHS CompliantIDTop View 3.0Al Automotive Qualified*DescriptionSpecifically d

PD - 96102BEND OF LIFEIRF7105QPbFHEXFET Power MOSFETN-CHANNEL MOSFETl Advanced Process Technology1 8 N-Ch P-ChS1 D1l Ultra Low On-Resistance2 7G1 D1l Dual N and P Channel MOSFETVDSS 25V -25Vl Surface Mount 3 6S2 D2l Available in Tape & Reel45RDS(on) 0.10 0.25G2 D2l 150C Operating TemperatureP-CHANNEL MOSFETl Lead-FreeTop ViewID 3.5A -2.3A

PD - 9.1098BIRF7106PRELIMINARYHEXFET Power MOSFETAdvanced Process TechnologyN-CHANNEL MOSFETUltra Low On-Resistance N-Ch P-Ch1 8S1 D1Dual N and P Channel Mosfet2 7G1 D1Surface Mount VDSS 20V -20V3 6Available in Tape & ReelS2 D2Dynamic dv/dt RatingRDS(on) 0.125 0.204 5G2 D2Fast SwitchingP-CHANNEL MOSFETID 3.0A -2.5ATop ViewDescriptionFour

PD - 9.1099BIRF7107PRELIMINARYHEXFET Power MOSFETAdvanced Process TechnologyN-CHANNEL MOSFETN-Ch P-ChUltra Low On-Resistance1 8S1 D1Dual N and P Channel Mosfet2 7G1 D1VDSS 20V -20VSurface Mount3 6Available in Tape & ReelS2 D2RDS(on) 0.125 0.160Dynamic dv/dt Rating4 5G2 D2Fast SwitchingP-CHANNEL MOSFETID 3.0A -2.8ATop ViewDescriptionF

IRF7105TRPbF-1HEXFET Power MOSFETN-CHANNEL MOSFET1 8N-CH P-CH S1 D1VDS 25 -25 V 2 7G1 D1RDS(on) max 3 60.1 0.25 S2 D2(@V = 10V)GS45G2 D2Qg (typical) 9.4 10 nCP-CHANNEL MOSFETID 3.5 -2.3 A SO-8Top View(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techn

PD -96085AIRF7103IPbFHEXFET Power MOSFETl Adavanced Process Technology1 8l Ultra Low On-Resistance S1 D1VDSS = 50V2 7l Dual N-Channel MOSFETG1 D1l Surface Mount3 6S2 D2RDS(on) = 0.130l Available in Tape & Reel4 5G2 D2l Dynamic dv/dt RatingID = 3.0Al Fast SwitchingTop Viewl Lead-FreeDescriptionThe SO-8 has been modified through a customizedlea

PD- 95746IRF710SPbF Lead-Free8/23/04Document Number: 91042 www.vishay.com1IRF710SPbFDocument Number: 91042 www.vishay.com2IRF710SPbFDocument Number: 91042 www.vishay.com3IRF710SPbFDocument Number: 91042 www.vishay.com4IRF710SPbFDocument Number: 91042 www.vishay.com5IRF710SPbFDocument Number: 91042 www.vishay.com6IRF710SPbFPeak Diode Recovery

PD - 93944CIRF7103QAUTOMOTIVE MOSFETTypical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection)))) Power Doors, Windows & Seats VDSS RDS(on) max (m) IDBenefits 50V 130@VGS = 10V 3.0A Advanced Process Technology200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature R

PD - 9.871BIRF7101HEXFET Power MOSFET Adavanced Process Technology1 8 Ultra Low On-Resistance D1S1VDSS = 20V Dual N-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2RDS(on) = 0.10 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingID = 3.5A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced pro

PD - 9.1096BIRF7104HEXFET Power MOSFET Adavanced Process Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = -20V Dual P-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2RDS(on) = 0.250 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingID = -2.3A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced

IRF7103PbF-1HEXFET Power MOSFETVDS 50 V1 8S1 D1RDS(on) max 0.13 2 7G1 D1(@V = 10V)GS3 6S2 D2RDS(on) max 0.20 4 5(@V = 4.5V) G2 D2GSQg (typical) 12 nCSO-8Top ViewID 3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturin

PD - 95366IRF710PbF Lead-Freewww.irf.com 16/10/04IRF710PbF2 www.irf.comIRF710PbFwww.irf.com 3IRF710PbF4 www.irf.comIRF710PbFwww.irf.com 5IRF710PbF6 www.irf.comIRF710PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.139)2.62 (.103) 4.20 (.165)- A -

PD - 9.1095BIRF7103HEXFET Power MOSFET Adavanced Process Technology1 8 Ultra Low On-Resistance D1S1VDSS = 50V Dual N-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2RDS(on) = 0.130 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingID = 3.0A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced p

PD - 9.1097CIRF7105HEXFET Power MOSFET Advanced Process Technology N-CHANNEL MOSFET1 8N-Ch P-ChS1 D1 Ultra Low On-Resistance2 7 Dual N and P Channel MosfetG1 D1VDSS 25V -25V Surface Mount3 6S2 D2 Available in Tape & Reel45RDS(on) 0.10 0.25G2 D2 Dynamic dv/dt RatingP-CHANNEL MOSFET Fast SwitchingTop ViewID 3.5A -2.3ADescriptionFourth Ge

FastIRFET IRF7171MTRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) Applications and Benefits Ideal for High Performance Isolated Converter VDSS VGS RDS(on) Primary Switch 100V min 20V max 5.3m@ 10V Optimized for Synchronous Rectification RoHS Compliant, Halogen Free Qg tot Qgd Vgs(th) Lead-Free (Qualified u

November 2001IRF710B/IRFS710B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 400V, RDS(on) = 3.4 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 7.7 nC)planar, DMOS technology. Low Crss ( typical 6.0 pF)This advanced technology has been especially tailored to

IRF710AAdvanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating AreaTO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 2.815 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

IRF710S, SiHF710SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 400 Surface MountRDS(on) ()VGS = 10 V 3.6 Available in Tape and Reel Qg (Max.) (nC) 17 Dynamic dV/dt RatingQgs (nC) 3.4 Repetitive Avalanche Rated Fast SwitchingQgd (nC) 8.5 Ease of ParallelingConfiguration Sin

IRF710, SiHF710Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 3.6RoHS*Qg (Max.) (nC) 17 Fast Switching COMPLIANTQgs (nC) 3.4 Ease of ParallelingQgd (nC) 8.5 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDTO

PD -95037BIRF7103PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual N-Channel MOSFETVDSS = 50V2 7G1 D1l Surface Mount3 6l Available in Tape & Reel S2 D2RDS(on) = 0.130l Dynamic dv/dt Rating 4 5G2 D2l Fast SwitchingID = 3.0ATop Viewl Lead-FreeDescriptionThe SO-8 has been modified through a customizedleadf

AUTOMOTIVE GRADE AUIRF7103Q VDSS Features 1 8S1 D1 50V Advanced Planar Technology 2 7G1 D1RDS(on) max. Dual N Channel MOSFET 3 6S2 D2130m4 Low On-Resistance 5G2 D2ID Logic Level Gate Drive 3.0A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

PD - 95254IRF7104PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P-Channel MOSFETVDSS = -20V2 7G1 D1l Surface Mountl Available in Tape & Reel 3 6S2 D2RDS(on) = 0.250l Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingID = -2.3Al Lead-FreeTop ViewDescriptionFourth Generation HEXFETs from InternationalRecti

PD - 95164IRF7105PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceN-CHANNEL MOSFET1 8N-Ch P-ChS1 D1l Dual N and P Channel Mosfet2 7l Surface MountG1 D1VDSS 25V -25Vl Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating45RDS(on) 0.10 0.25G2 D2l Fast SwitchingP-CHANNEL MOSFETl Lead-FreeTop ViewID 3.5A -2.3A

PD - 95162IRF7101PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-Resistance1 8l Dual N-Channel MOSFETS1 D1VDSS = 20Vl Surface Mount2 7G1 D1l Available in Tape & Reel3 6S2 D2RDS(on) = 0.10l Dynamic dv/dt Rating4 5G2 D2l Fast Switchingl Lead-FreeID = 3.5ATop ViewDescriptionFourth Generation HEXFETs from InternationalRectifi

IRF7103TRwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe

IRF7101TRwww.VBsemi.twDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET200.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8 D1 D2S1 1 D18G1 2 D17S2 3 D26G1 G2G2 4 D25

IRF7105TRPBFwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at

isc N-Channel Mosfet Transistor IRF710FEATURESLow RDS(on)V Rated at 20VGSSilicon Gate for Fast Switching SpeedRuggedLow Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmo