AO4704 Specs and Replacement
Type Designator: AO4704
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 322 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: SOP8
AO4704 substitution
- MOSFET ⓘ Cross-Reference Search
AO4704 datasheet
ao4704.pdf
SMD Type MOSFET N-Channel MOSFET AO4704 (KO4704) SOP-8 Unit mm Features VDS (V) = 30V ID = 13 A (VGS = 10V) RDS(ON) 11.5m (VGS = 10V) 1.50 0.15 RDS(ON) 13m (VGS = 4.5V) VDS (V) = 30V, IF = 3A, VF... See More ⇒
ao4702.pdf
AO4702 N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4702 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON) and low gate charge. A Schottky Diode is ID = 11A (VGS = 10V) packaged in parallel to improve device performance in RDS(ON) ... See More ⇒
ao4706.pdf
AO4706 30V N-Channel MOSFET SRFET TM General Description Product Summary TM SRFET The AO4706 uses advanced trench VDS (V) = 30V technology with a monolithically integrated Schottky ID =16.5A (VGS = 10V) diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side RDS(ON) ... See More ⇒
ao4708.pdf
AO4708 30V N-Channel MOSFET SRFET TM General Description Product Summary TM SRFET AO4708 uses advanced trench technology VDS (V) = 30V with a monolithically integrated Schottky diode to ID =15A (VGS = 10V) provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, RDS(ON) ... See More ⇒
Detailed specifications: AO4404, AO4406, AO4408, AO4418, AO4444, AO4476, AO4492, AO4702, AO4407, AP2322GN, AP9974, BSS138E, D1096, F501, IRFP064PBF, KDT3055L, KI010NDS
Keywords - AO4704 MOSFET specs
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History: SP8009E
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