AP9974 Datasheet and Replacement

SMD Type MOSFETN-Channel MOSFETAP9974TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features VDS (V) = 60V ID = 68 A (VGS = 10V)0.127+0.10.80-0.1 RDS(ON) 12m (VGS = 10V) max RDS(ON) 15m (VGS = 4.5V) Single Drive Requirement+ 0.12.3 0.60- 0.11 Gate+0.154.60 -0.152 Drain3 SourceDGS

AP9974GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Single Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSTO-252(H)designer with the best combination of fast swi

AP9974GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AG RoHS Compliant & Halogen-FreeSDescriptionAP9974 series are from Advanced Power innovated de

AP9974GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized d

AP9974BGPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 60VD Single Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID 65AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resista

AP9974GS/PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 60VD Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 72AGSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching, DSTO-263(S)ruggedized device desi

AP9974AGH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 12m Surface Mount Package ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAP9974A series are from Advanced Power innovated design and

AP9974AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Surface Mount Package ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSTO-252(H)designer with the best combination of fast switching,r

AP9974AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized d

AP9974AGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 60VD Single Drive Requirement RDS(ON) 12m Fast Switching Characteristic ID 68AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS

AP9974GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Simple Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74AG RoHS Compliant & Halogen-FreeSDescriptionAP9974 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the

AP9974GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 60V Simple Drive Requirement RDS(ON) 10.5m Fast Switching Performance ID 74AG RoHS Compliant & Halogen-FreeSDescriptionAP9974 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve the

AP9974GSwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source