IRFP064PBF
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP064PBF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 190
nC
trⓘ - Rise Time: 190
nS
Cossⓘ -
Output Capacitance: 3200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
TO247
IRFP064PBF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP064PBF
Datasheet (PDF)
..1. Size:1790K international rectifier
irfp064pbf.pdf 
PD- 95672IRFP064PbF Lead-Free8/2/04Document Number: 91201 www.vishay.com1IRFP064PbFDocument Number: 91201 www.vishay.com2IRFP064PbFDocument Number: 91201 www.vishay.com3IRFP064PbFDocument Number: 91201 www.vishay.com4IRFP064PbFDocument Number: 91201 www.vishay.com5IRFP064PbFDocument Number: 91201 www.vishay.com6IRFP064PbFPeak Diode Recovery d
..2. Size:3803K kexin
irfp064pbf.pdf
DIP Type MOSFETN-Channel MOSFETIRFP064PBF (KRFP064PBF)TO-247 Features VDS (V) = 60V ID = 70 A (VGS = 10V) RDS(ON) 9m (VGS = 10V) Very Low Thermal Resistance Isolated Central Mounting Hole 1 2 3 Fast SwitchingGD Dynamic dV/dt RatingSDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volt
7.1. Size:210K international rectifier
irfp064v.pdf
PD - 94112IRFP064VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 5.5mG Fast Switching Fully Avalanche RatedID = 130A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to
7.2. Size:255K international rectifier
auirfp064n.pdf
PD - 96375AUTOMOTIVE GRADEAUIRFP064NHEXFET Power MOSFETFeatures Advanced Planar TechnologyD Low On-Resistance V(BR)DSS 55V Dynamic dV/dT Rating 175C Operating TemperatureRDS(on) max.0.008 Fast SwitchingG Fully Avalanche RatedID110A Repetitive Avalanche Allowed up to TjmaxS Lead-Free, RoHS Compliant Automotive Qualified *DDescriptionSpecifical
7.3. Size:598K international rectifier
irfp064npbf.pdf
PD - 95001IRFP064NPbF Lead-Freewww.irf.com 12/11/04IRFP064NPbF2 www.irf.comIRFP064NPbFwww.irf.com 3IRFP064NPbF4 www.irf.comIRFP064NPbFwww.irf.com 5IRFP064NPbF6 www.irf.comIRFP064NPbFwww.irf.com 7IRFP064NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1
7.4. Size:107K international rectifier
irfp064n.pdf
PD - 9.1383AIRFP064NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.008 Fast SwitchingG Fully Avalanche RatedID = 110A SDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance
7.6. Size:222K international rectifier
irfp064vpbf.pdf
PD - 95501AIRFP064VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 5.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 130Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced
7.7. Size:1684K vishay
irfp064 sihfp064.pdf
IRFP064, SiHFP064Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.009 Ultra Low On- ResistanceRoHS*COMPLIANTQg (Max.) (nC) 190 Very Low Thermal ResistanceQgs (nC) 55 Isolated Central Mounting HoleQgd (nC) 90 175 C Operating Temperature Fast Swi
7.8. Size:598K infineon
irfp064npbf.pdf
PD - 95001IRFP064NPbF Lead-Freewww.irf.com 12/11/04IRFP064NPbF2 www.irf.comIRFP064NPbFwww.irf.com 3IRFP064NPbF4 www.irf.comIRFP064NPbFwww.irf.com 5IRFP064NPbF6 www.irf.comIRFP064NPbFwww.irf.com 7IRFP064NPbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)1
7.9. Size:362K cn evvo
irfp064n.pdf
IRFP064N N-Channel MOSFET Advanced Process TechnologyTO-247AC Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedDescriptionThe TO-247 package is preferred for commercial-industrialapplications where higher power levels preclude the use ofDTO-220 devices. The TO-247 is similar but superior to theVDSS = 55Ve
7.10. Size:364K inchange semiconductor
irfp064n.pdf
isc N-Channel MOSFET Transistor IRFP064NFEATURESStatic drain-source on-resistance:RDS(on)8m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source
7.11. Size:400K inchange semiconductor
irfp064.pdf
iscN-Channel MOSFET Transistor IRFP064FEATURESLow drain-source on-resistance:RDS(ON) 9m @V =10VGSEnhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
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