2N7101 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2N7101
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO210

2N7101 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N7101 Datasheet (PDF)

..1. Size:1095K ixys
2n6963 2n6965 2n7100 2n7101 2n7102 2n710.pdf

Powered by ICminer.com Electronic-Library Service CopyRight 2003Powered by ICminer.com Electronic-Library Service CopyRight 2003Powered by ICminer.com Electronic-Library Service CopyRight 2003Powered by ICminer.com Electronic-Library Service CopyRight 2003Powered by ICminer.com Electronic-Library Service CopyRight 2003Powered by ICminer.com Electronic-Library Service CopyRight 20

9.1. Size:178K rca
2n710.pdf