NDT6N60P PDF and Equivalents Search

 

NDT6N60P Specs and Replacement

Type Designator: NDT6N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 150 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO251

NDT6N60P substitution

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NDT6N60P datasheet

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ndt6n60p.pdf pdf_icon

NDT6N60P

DIP Type MOSFET N-Channel MOSFET NDT6N60P TO-251 Features VDS (V) = 600V 1 2 3 ID = 6.2 A (VGS = 10V) RDS(ON) 1.5 (VGS = 10V) Fast switching capability Low reverse transfer Capacitance 1 3 2 Drain Unit mm Gate Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage V... See More ⇒

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NDT6N60P

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 8.1. Size:3425K  kexin
ndt6n65p.pdf pdf_icon

NDT6N60P

DIP Type MOSFET N-Channel Enhancement MOSFET NDT6N65P TO-251 Features VDS (V) = 650V 1 2 3 ID = 4.8A (VGS = 10V) RDS(ON) 1.8 (VGS = 10V) D Low gate charge ( typical 16nC) 1 3 2 G S Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou... See More ⇒

 9.1. Size:3144K  kexin
ndt6n70p.pdf pdf_icon

NDT6N60P

DIP Type MOSFET N-Channel Enhancement MOSFET NDT6N70P TO-251 Features VDS (V) = 700V ID = 4.8A (VGS = 10V) 1 2 3 RDS(ON) 1.8 (VGS = 10V) Low gate charge ( typical 16nC) D 1 3 2 G S Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 700 V Gate-Source Voltage VGS 30 Tc=25 4.8 Continuou... See More ⇒

Detailed specifications: NDT4N20L, NDT4N60, NDT4N65, NDT4N65P, NDT4N70, NDT50N03, NDT5N70P, NDT6N60, IRF640, NDT6N65P, NDT6N70, NDT6N70P, NDT70N03, NDT70N06, NDT90N03, NDT90N04, NFT1N60

Keywords - NDT6N60P MOSFET specs

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