SI2312DS PDF and Equivalents Search

 

SI2312DS Specs and Replacement

Type Designator: SI2312DS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: SOT23

SI2312DS substitution

- MOSFET ⓘ Cross-Reference Search

 

SI2312DS datasheet

 ..1. Size:85K  vishay
si2312ds.pdf pdf_icon

SI2312DS

Si2312DS Vishay Siliconix N-Channel 20 -V (D-S) MOSFET FEATURES PRODUCT SUMMARY D 1.8-V Rated D RoHS Compliant VDS (V) rDS(on) (W) ID (A) Qg (Typ) Pb-free 0.033 @ VGS = 4.5 V 4.9 Available 0.040 @ VGS = 2.5 V 4.4 20 11.2 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2312DS (C2)* *Marking Code Ordering Information Si2312DS-T1 Si2312DS-T1 E3 (Lead (Pb)-F... See More ⇒

 ..2. Size:1660K  kexin
si2312ds.pdf pdf_icon

SI2312DS

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23 Unit mm Features +0.1 2.9-0.1 +0.1 0.4 -0.1 VDS (V) = 20V 3 ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 40m (VGS = 2.5V) 1 2 RDS(ON) 51m (VGS = 1.8V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Abs... See More ⇒

 ..3. Size:1476K  cn vbsemi
si2312ds.pdf pdf_icon

SI2312DS

SI2312DS www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Conve... See More ⇒

 0.1. Size:1696K  kexin
si2312ds-3.pdf pdf_icon

SI2312DS

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 20V ID = 4.9 A (VGS =4.5V) RDS(ON) 33m (VGS = 4.5V) 1 2 RDS(ON) 40m (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 51m (VGS = 1.8V) G 1 3 D 1. Gate 2. Source S 2 3. Drain... See More ⇒

Detailed specifications: NDT70N06, NDT90N03, NDT90N04, NFT1N60, NTD100N02, NTD6N15, SI2306DS, SI2308DS, P55NF06, SI2314EDS, SI2318CDS, SI2318DS, SI2324DS, SI2328DS, SI2356DS, SI2366DS, SI2372DS

Keywords - SI2312DS MOSFET specs

 SI2312DS cross reference

 SI2312DS equivalent finder

 SI2312DS pdf lookup

 SI2312DS substitution

 SI2312DS replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

↑ Back to Top
.