SI2318CDS MOSFET Datasheet: N-Ch, 40V, 5.6A. Full specification with pinout and replacement list

SI2318CDS Specs and Replacement

Type Designator: SI2318CDS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: SOT23

SI2318CDS substitution

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SI2318CDS datasheet

..1. Size:236K vishay
si2318cds.pdf pdf_icon

New Product Si2318CDS Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.042 at VGS = 10 V TrenchFET Power MOSFET 5.6 40 2.9 nC 100 % Rg Tested 0.051 at VGS = 4.5 V 5.1 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converte... See More ⇒

..2. Size:1646K kexin
si2318cds.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET SI2318CDS (KI2318CDS) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) 1 2 RDS(ON) 51m (VGS = 4.5V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Symbol... See More ⇒

0.1. Size:1519K kexin
si2318cds-3.pdf pdf_icon

SMD Type MOSFET N-Channel MOSFET SI2318CDS (KI2318CDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 40V ID = 5.6 A (VGS = 10V) RDS(ON) 42m (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 RDS(ON) 51m (VGS = 4.5V) 0.95 -0.1 +0.1 1.9 -0.2 D 1. Gate 2. Source 3. Drain G S Absolute Maximum Ratings Ta = 25 Parameter Sy... See More ⇒

0.2. Size:848K cn vbsemi
si2318cds-t1-ge3.pdf pdf_icon

SI2318CDS-T1-GE3 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SO... See More ⇒