SI4056DY Datasheet and Replacement
Type Designator: SI4056DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 340 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SOP8
SI4056DY substitution
SI4056DY Datasheet (PDF)
si4056dy.pdf

Si4056DYwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESSO-8 SingleD TrenchFET power MOSFETD 5D 6 100 % Rg and UIS testedD 78 Material categorization:for definitions of compliance please seewww.vishay.com/doc?999124G APPLICATIONS33SS2 D 2 DC/DC primary side switchSS11S Telecom / serverTop View
si4056dy.pdf

SMD Type MOSFET N-Channel MOSFET SI4056DY (KI4056DY)SOP-8 Features VDS (V) = 100V ID = 11.1 A (VGS = 10V)D RDS(ON) 23m (VGS = 10V)1.50 0.15 RDS(ON) 24m (VGS = 7.5V) RDS(ON) 31 m (VGS = 4.5V)G 1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateS Absolute Maximum Ratings Ta = 25Parameter Symbol Ra
si4058dy.pdf

Si4058DYwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET power MOSFET VDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) 100 % Rg and UIS tested0.026 at VGS = 10 V 10.3100 5.8 nC Material categorization:0.033 at VGS = 4.5 V 9.2for definitions of compliance please see www.vishay.com/doc?99912SO-8 SingleDD 5A
Datasheet: SI2314EDS , SI2318CDS , SI2318DS , SI2324DS , SI2328DS , SI2356DS , SI2366DS , SI2372DS , K4145 , SI4490DY , SI4634DY , SI7898DP , SI9410DY , SIR422DP , UTT6N10Z , APM2518NU , APM2558NU .
History: STP15NM60N | IRHMS597Z60 | HAT1048RJ | JCS640FH | BRB50N06 | CEP50N06 | 2SK4014
Keywords - SI4056DY MOSFET datasheet
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History: STP15NM60N | IRHMS597Z60 | HAT1048RJ | JCS640FH | BRB50N06 | CEP50N06 | 2SK4014



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