All MOSFET. SI9410DY Datasheet

 

SI9410DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI9410DY
   Marking Code: 9410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP8

 SI9410DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI9410DY Datasheet (PDF)

 ..1. Size:42K  vishay
 si9410dy.pdf

SI9410DY SI9410DY

 ..2. Size:1282K  kexin
 si9410dy.pdf

SI9410DY SI9410DY

SMD Type MOSFETN-Channel MOSFETSI9410DY (KI9410DY)SOP-8 Features VDS (V) = 30V ID = 7 A (VGS = 10V)1.50 0.15 RDS(ON) 30m (VGS = 10V) RDS(ON) 40m (VGS = 5V)1 Source 5 Drain RDS(ON) 50m (VGS = 4.5V)6 Drain2 Source7 Drain3 Source8 Drain4 Gate Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sou

 8.1. Size:245K  vishay
 si9410bdy.pdf

SI9410DY SI9410DY

 8.2. Size:866K  cn vbsemi
 si9410bdy-t1.pdf

SI9410DY SI9410DY

SI9410BDY-T1www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: AOCA24106C

 

 
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