All MOSFET. 2N6660-SM Datasheet


2N6660-SM MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N6660-SM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 6.25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 1.1 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 50 pF

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO220SM

2N6660-SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2N6660-SM Datasheet (PDF)

 7.1. Size:125K  vishay

2N6660-SM 2N6660-SM

2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXVwww.vishay.comVishay SiliconixN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Military QualifiedVDS (V) 60 Low On-Resistence: 1.3 RDS(on) () at VGS = 10 V 3 Low Threshold: 1.7 VConfiguration Single Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output LeakageTO-205AD(TO-3

 7.2. Size:42K  no
2n6656-59 2n6660-61.pdf


 8.1. Size:527K  supertex

2N6660-SM 2N6660-SM

Supertex inc. 2N6660N-Channel Enhancement-ModeVertical DMOS FETFeaturesGeneral DescriptionThe Supertex 2N6660 is an enhancement-mode (normally- Free from secondary breakdownoff) transistor that utilizes a vertical DMOS structure and Low power drive requirementSupertexs well-proven silicon-gate manufacturing process. Ease of parallelingThis combination produ

 8.2. Size:21K  supertex
2n6660 2n6661.pdf

2N6660-SM 2N6660-SM

2N66602N6661N-Channel Enhancement-ModeVertical DMOS FETsOrdering InformationOrder Number / PackageBVDSS /RDS(ON) ID(ON)BVDGS (max) (min) TO-3960V 3.0 1.5A 2N666090V 4.0 1.5A 2N6661High Reliability Devices Advanced DMOS TechnologySee pages 5-4 and 5-5 for MILITARY STANDARD ProcessThese enhancement-mode (normally-off) transistors utilize aFlows and Ordering Informa

 8.3. Size:236K  semelab

2N6660-SM 2N6660-SM

N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660C4 VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0 Fast Switching Low Threshold Voltage (Logic Level) Low CISS Integral Source-Drain Body Diode Hermetic Surface Mounted Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source V

 8.4. Size:129K  semelab

2N6660-SM 2N6660-SM

2N6660CSM4 MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 1.40 0.155.59 0.13(0.055 0.006) ENHANCEMENT MODE (0.22 0.005)0.25 0.03(0.01 0.001)MOSFET 0.23rad.(0.009)V 60VDSS3 2I 1.0AD0.234 1min.(0.009)R 3.0 DS(on)1.02 0.20 2.03 0.20FEATURES (0.04 0.008) (0.08 0.008) Faster switching Low Ciss

Datasheet: 2N6659 , 2N6659-LCC4 , 2N6659-SM , 2N6660 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 , IRFP250N , 2N6661 , 2N6661-220M , 2N6661JAN , 2N6661JANTX , 2N6661JANTXV , 2N6661-LCC4 , 2N6661SM , 2N6755 .


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