SM3054NSU
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM3054NSU
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 27.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 24
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.3
nC
trⓘ - Rise Time: 10.6
nS
Cossⓘ -
Output Capacitance: 63
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032
Ohm
Package:
TO252
SM3054NSU
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM3054NSU
Datasheet (PDF)
..1. Size:265K sino
sm3054nsu.pdf
SM3054NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/24A,D RDS(ON)= 32m (max.) @ VGS=10VS RDS(ON)= 42m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information
9.1. Size:983K globaltech semi
gsm3050s.pdf
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3050S, P-Channel enhancement mode -30V/-9A,RDS(ON)=60m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=72m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-5A,RDS(ON)=108m@VGS=-2.5V These devices are particularly suited for low Super high density cell design f
9.2. Size:777K huashuo
hsm3056.pdf
HSM3056 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3056 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.2 m gate charge for most of the synchronous buck converter applications. ID 20 A The HSM3056 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliab
Datasheet: WPB4002
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