SM3054NSU Datasheet and Replacement
Type Designator: SM3054NSU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10.6 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO252
SM3054NSU substitution
SM3054NSU Datasheet (PDF)
sm3054nsu.pdf

SM3054NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/24A,D RDS(ON)= 32m (max.) @ VGS=10VS RDS(ON)= 42m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information
gsm3050s.pdf

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3050S, P-Channel enhancement mode -30V/-9A,RDS(ON)=60m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=72m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-5A,RDS(ON)=108m@VGS=-2.5V These devices are particularly suited for low Super high density cell design f
hsm3056.pdf

HSM3056 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3056 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.2 m gate charge for most of the synchronous buck converter applications. ID 20 A The HSM3056 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliab
Datasheet: SM2308NSA , SM2310NSA , SM2312NSA , SM2314NSA , SM2316NSA , SM2318NSA , SM3024NSF , SM3024NSU , IRF4905 , SM3106NSF , SM3106NSU , SM3113NSU , SM3114NSU , SM3116NAF , SM3116NAFP , SM6018NSU , SM6018NSUB .
History: DMJ70H600SH3
Keywords - SM3054NSU MOSFET datasheet
SM3054NSU cross reference
SM3054NSU equivalent finder
SM3054NSU lookup
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History: DMJ70H600SH3



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