SM3054NSU Specs and Replacement
Type Designator: SM3054NSU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10.6 nS
Cossⓘ - Output Capacitance: 63 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO252
SM3054NSU substitution
- MOSFET ⓘ Cross-Reference Search
SM3054NSU datasheet
sm3054nsu.pdf
SM3054NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/24A, D RDS(ON)= 32m (max.) @ VGS=10V S RDS(ON)= 42m (max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Information ... See More ⇒
gsm3050s.pdf
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3050S, P-Channel enhancement mode -30V/-9A,RDS(ON)=60m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=72m @VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-5A,RDS(ON)=108m @VGS=-2.5V These devices are particularly suited for low Super high density cell design f... See More ⇒
hsm3056.pdf
HSM3056 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3056 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.2 m gate charge for most of the synchronous buck converter applications. ID 20 A The HSM3056 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliab... See More ⇒
Detailed specifications: SM2308NSA, SM2310NSA, SM2312NSA, SM2314NSA, SM2316NSA, SM2318NSA, SM3024NSF, SM3024NSU, IRF4905, SM3106NSF, SM3106NSU, SM3113NSU, SM3114NSU, SM3116NAF, SM3116NAFP, SM6018NSU, SM6018NSUB
Keywords - SM3054NSU MOSFET specs
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