All MOSFET. SM3016NSU Datasheet

 

SM3016NSU MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM3016NSU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO252

 SM3016NSU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM3016NSU Datasheet (PDF)

 ..1. Size:174K  sino
 sm3016nsu.pdf

SM3016NSU SM3016NSU

SM3016NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/75A,D RDS(ON)=5m (Max.) @ VGS=10VS RDS(ON)=6.9m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3 (RoHS Compliant) ESD ProtectionD HBM ESD protection level pass 2KV 100% UIS + Rg TestedGApplications Power Management in Deskt

 8.1. Size:926K  globaltech semi
 gsm3016s.pdf

SM3016NSU SM3016NSU

GSM3016S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=9m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltag

 9.1. Size:410K  taiwansemi
 tsm301k12cq.pdf

SM3016NSU SM3016NSU

TSM301K12 20V P-Channel MOSFET with Schottky Diode TDFN 2x2 PRODUCT SUMMARY Pin Definition: 1. Anode 6. Cathode VDS (V) RDS(on)(m) ID (A) 2. NC 5. Gate 3. Drain 4. Source 94 @ VGS = -4.5V -2.8 -20 131 @ VGS = -2.5V -2.3 185 @ VGS = -1.8V -0.54 SCHOTTKY PRODUCT SUMMARY VR (V) VF (V) IF (A) 20 0.5 2 Block Diagram Features Configuration with MOSFET and L

 9.2. Size:270K  sino
 sm3017nsu.pdf

SM3016NSU SM3016NSU

SM3017NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/68A,D RDS(ON)=7.2m (max.) @ VGS=10VS RDS(ON)=9.8m (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3 (RoHS Compliant)D 100% EAS (UIS) test ESD ProtectionGApplications Power Management in Desktop Computer or DC/DC Converters.SN-Channe

 9.3. Size:937K  globaltech semi
 gsm3019s.pdf

SM3016NSU SM3016NSU

GSM3019S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/20A,RDS(ON)=13m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta

 9.4. Size:898K  globaltech semi
 gsm3015s.pdf

SM3016NSU SM3016NSU

GSM3015S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3015S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.1m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/30A,RDS(ON)=6.8m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) vo

 9.5. Size:800K  cn sps
 sm3012t9rl.pdf

SM3016NSU SM3016NSU

SM3012T9RL30V /36A Single N Power MOSFET N-Ch and P-Ch Fast Switching MOSFETsProduct Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 21m 20A Advanced high cell density Trench -30V 28m -20A technology Description TO252 Pin Configuration The 3012 is the high performanc

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IRF9Z24NS

 

 
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