SM2A12NSF
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM2A12NSF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 113
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 40
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 155
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07
Ohm
Package:
TO220
SM2A12NSF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM2A12NSF
Datasheet (PDF)
..1. Size:247K sino
sm2a12nsf.pdf 
SM2A12NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/25A, RDS(ON)= 70m (max.) @ VGS= 10V Reliable and RuggedS Lead Free and Green Devices AvailableDG (RoHS Compliant)Top View of TO-220DGApplications High Frequency DC-DC converters.S Plasma Display Panel. Power Management in TV Converter.N-Channel MOSFETOrdering and Marking Informati
6.1. Size:169K sino
sm2a12nsu.pdf
SM2A12NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/25A,D RDS(ON)= 70m(max.) @ VGS= 10VS 100% UIS + Rg TestedG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-2 (RoHS Compliant)DGApplications Power Management in TV Converter.S DC-DC Converter.N-Channel MOSFETOrdering and Marking InformationPackage C
6.2. Size:291K sino
sm2a12nskp.pdf
SM2A12NSKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/23A,DDDD RDS(ON)= 70m (max.) @ VGS= 10V Reliable and RuggedG Lead Free and Green Devices AvailableS Pin 1SS (RoHS Compliant)DFN5x6-8( 5,6,7,8 )D D DD(4)ApplicationsG Power Management in TV Converter. DC-DC Converter.S S S(1, 2, 3)N-Channel MOSFETOrdering and Marking
9.1. Size:174K sino
sm2a18dsk.pdf
SM2A18DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 200V/0.9A,D2RDS(ON)= 1140m(max.) @ VGS= 10V RDS(ON)= 1300m(max.) @ VGS= 4.5VS1G1 ESD protectedS2G2 100% UIS + Rg TestedTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices AvailableD1 D1 D2 D2 (RoHS Compliant)ApplicationsG1 G2 Power Management in D
9.2. Size:168K sino
sm2a16nsf sm2a16nsfp.pdf
SM2A16NSF/SM2A16NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/15A,RDS(ON)=156m (max.) @ VGS=10V Reliable and RuggedS S Lead Free and Green Devices AvailableD DG G(RoHS Compliant)Top View of TO-220FPTop View of TO-220 100% UIS + Rg TestedDApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking Infor
9.3. Size:302K sino
sm2a11nsf.pdf
SM2A11NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/58A, RDS(ON)= 26.5m (max.) @ VGS= 10V 100% UIS + Rg TestedS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-220 (RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking Informatio
9.4. Size:185K sino
sm2a18nsv.pdf
SM2A18NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 200V/1.1A,RDS(ON)= 1140m(max.) @ VGS= 10VG RDS(ON)= 1300m(max.) @ VGS= 4.5VDS 100% UIS+Rg tested Reliable and RuggedTop View SOT-223 Lead Free and Green Devices AvailableD (RoHS Compliant)ApplicationsG Power Management in TV Inverter.S N-Channel MOSFETOrdering and Marking In
9.5. Size:781K cn vbsemi
sm2a18nsv.pdf
SM2A18NSVwww.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Available in tape and reelVDS (V) 200 Dynamic dV/dt ratingRDS(on) ()VGS = 10 V 1.2 Repetitive avalanche ratedQg (Max.) (nC) 8.2 Fast switchingQgs (nC) 1.8 Ease of parallelingAvailableQgd (nC) 4.5 Simple drive requirementsConfiguration SingleDSOT-223DGSDG
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