All MOSFET. SM6033NAF Datasheet

 

SM6033NAF MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM6033NAF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 190 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm
   Package: TO220

 SM6033NAF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM6033NAF Datasheet (PDF)

 ..1. Size:247K  sino
 sm6033naf.pdf

SM6033NAF SM6033NAF

SM6033NAFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/190Aa, RDS(ON)= 3.6m (max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG For DC-AC Inverter and UPS Application. Dynamic dv/dt Rating.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM6033NA

 7.1. Size:275K  sino
 sm6033nsg.pdf

SM6033NAF SM6033NAF

SM6033NSGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/200Aa, RDS(ON)= 3.4m (max.) @ VGS= 10VS Reliable and RuggedG Lead Free and Green Devices Available Top View of TO-263-3(RoHS Compliant)DApplicationsG High Efficiency Synchronous Rectification in SMPS Uninterruptible Power SupplyS High Speed Power SwitchingN-Channel MOSFETOrderin

 7.2. Size:246K  sino
 sm6033nsf.pdf

SM6033NAF SM6033NAF

SM6033NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/200A**, RDS(ON)= 3.4m (max.) @ VGS= 10V Reliable and RuggedSD Lead Free and Green Devices Available G(RoHS Compliant)Top View of TO-220DApplicationsG High Efficiency Synchronous Rectification in SMPS Uninterruptible Power SupplyS High Speed Power SwitchingN-Channel MOSFETOrdering a

 9.1. Size:167K  sino
 sm6032nsg.pdf

SM6033NAF SM6033NAF

SM6032NSGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/260Aa, RDS(ON)= 2.4m(max.) @ VGS= 10VS 100% UIS+Rg TestedG Reliable and Rugged Top View of TO-263-2 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG High Efficiency Synchronous Rectification in SMPS Uninterruptible Power SupplyS High Speed Powe

 9.2. Size:641K  huashuo
 hsm6032.pdf

SM6033NAF SM6033NAF

HSM6032 Description Product Summary VDS 60 V The HSM6032 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.5 m gate charge for most of the synchronous buck converter applications. ID 13 A The HSM6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. SOP8 Pin Configurat

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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