All MOSFET. SM7003NSU Datasheet

 

SM7003NSU MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM7003NSU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
   Package: TO252

 SM7003NSU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM7003NSU Datasheet (PDF)

 ..1. Size:261K  sino
sm7003nsu.pdf

SM7003NSU
SM7003NSU

SM7003NSUN-Channel Enhancement Mode MOSFETFeatures Pin Description 68V/80A,DRDS(ON)= 7.2m (max.) @ VGS=10VS Reliable and RuggedG Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM7003NS

 6.1. Size:247K  sino
sm7003nsf.pdf

SM7003NSU
SM7003NSU

SM7003NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 68V/80A,RDS(ON)=7.2m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM7003NS F

 6.2. Size:252K  sino
sm7003nsfh.pdf

SM7003NSU
SM7003NSU

SM7003NSFHN-Channel Enhancement Mode MOSFETFeatures Pin Description 68V/80A,RDS(ON)=7.2m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant) Top View of TO-220HDApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationSM7003NS Package Code

 9.1. Size:264K  sino
sm7002nsf.pdf

SM7003NSU
SM7003NSU

SM7002NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 68V/80A,RDS(ON)=10.8m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM7002NS

 9.2. Size:227K  sino
sm7002nsan.pdf

SM7003NSU
SM7003NSU

SM7002NSAN N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/0.45A , RDS(ON)=2.2 (max.) @ VGS=10VS RDS(ON)=2.6 (max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23N(RoHS Compliant)D ESD Protection : HBM=(+/-)1600V MM=(+/-)100VGApplications High Speed Switching.S Analog Switching Application.N-Chann

 9.3. Size:429K  globaltech semi
gsm7002w.pdf

SM7003NSU
SM7003NSU

GSM7002W 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002W is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

 9.4. Size:289K  globaltech semi
gsm7002t.pdf

SM7003NSU
SM7003NSU

Dual N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002T is the Dual N-Channel 60V/0.50A , RDS(ON)= 2.0@VGS=10V enhancement mode field effect transistors are 60V/0.20A , RDS(ON)= 4.0@VGS=4.5V produced using high cell density DMOS Super high density cell design for extremely technology. low RDS (ON) Exceptional on-resistance and maximum

 9.5. Size:434K  globaltech semi
gsm7002j.pdf

SM7003NSU
SM7003NSU

GSM7002J 60V N-Channel Enhancement Mode MOSFET Product Description Features The GSM7002J is the N-Channel enhancement 60V/0.50A , RDS(ON)= 7.5@VGS=10V mode field effect transistors are produced using 60V/0.05A , RDS(ON)= 7.5@VGS=5V high cell density DMOS technology. Super high density cell design for extremely low RDS (ON) These products have been designed to minimize

 9.6. Size:988K  globaltech semi
gsm7002k.pdf

SM7003NSU
SM7003NSU

GSM7002K 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM7002K, N-Channel enhancement mode 60V/0.5A , RDS(ON)=2.4@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/0.3A , RDS(ON)=3.0@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low E

 9.7. Size:808K  globaltech semi
gsm7002.pdf

SM7003NSU
SM7003NSU

60V N-Channel Enhancement Mode MOSFET Product Description Features The GS7002 is the N-Channel enhancement mode 60V/0.50A , RDS(ON)= 6.0@VGS=10V field effect transistors are produced using high cell 60V/0.30A , RDS(ON)= 7.0@VGS=5V density DMOS technology. These products have Super high density cell design for extremely been designed to minimize on-state resistance lo

 9.8. Size:792K  silicon standard
ssm7002egu.pdf

SM7003NSU
SM7003NSU

SSM7002EGUN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002EGU acheives fast switching performanceBVDSS50Vwith low gate charge without a complex drive circuit. ItRDS(ON) 3is suitable for low voltage applications such as smallconverters and general load-switching circuits.ID 250mAThe SSM7002EGU is supplied in a RoHS-compliantPb-free; RoHS-

 9.9. Size:495K  silicon standard
ssm7002kgen.pdf

SM7003NSU
SM7003NSU

SSM7002KGENN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002KGEN acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2is suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 640mAD The SSM7002KGEN is supplied in an RoHS-compliantPb-free; R

 9.10. Size:808K  silicon standard
ssm7002dgu.pdf

SM7003NSU
SM7003NSU

SSM7002DGUDual N-channel Enhancement-mode Power MOSFETsPRODUCT SUMMARY DESCRIPTIONThe SSM7002DG acheives fast switching performanceBVDSS50Vwith low gate charge without a complex drive circuit. ItRDS(ON) 3is suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.ID 250mAThe SSM7002DGU is supplied in a RoHS-compliantPb-free;

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NTTFS4823N | IXFK88N30P

 

 
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