SM6130NSKP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM6130NSKP
Marking Code: 6130NS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 37.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 36
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 21
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145
Ohm
Package:
DFN5X6-8
SM6130NSKP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM6130NSKP
Datasheet (PDF)
..1. Size:258K sino
sm6130nskp.pdf
SM6130NSKP N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD 60V/36A,DDDRDS(ON)=14.5m (max.) @ VGS=10V RDS(ON)=17m (max.) @ VGS=4.5VGPin 1S 100% UIS + Rg TestedSS ESD ProtectionDFN5x6A-8_EP Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices AvailableD D D D(RoHS Compliant)Applications(4)G Secondary Side Synchronous Rectifi
5.1. Size:235K sino
sm6130nsk.pdf
SM6130NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 60V/7.7A,DD RDS(ON)= 15m (max.) @ VGS=10V RDS(ON)= 17.5m (max.) @ VGS=4.5VSS 100% UIS + Rg TestedSG ESD ProtectionTop View of SOP-8 Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices AvailableD D D D(RoHS Compliant)Applications(4)G Secondary Side Synchronous Rectif
6.1. Size:153K sino
sm6130nsub.pdf
SM6130NSUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/44A, RDS(ON)= 15m (max.) @ VGS=10V RDS(ON)= 17.5m (max.) @ VGS=4.5VS 100% UIS + Rg TestedDG ESD Protection Reliable and RuggedTop View of TO-251 Lead Free and Green Devices AvailableD (2) (RoHS Compliant)ApplicationsG (1) Secondary Side Synchronous Rectification DC-DC
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