All MOSFET. SM3326NHQA Datasheet

 

SM3326NHQA MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM3326NHQA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 22.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 27.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN3X3A-8

 SM3326NHQA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM3326NHQA Datasheet (PDF)

 ..1. Size:273K  sino
 sm3326nhqa.pdf

SM3326NHQA SM3326NHQA

SM3326NHQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/27.5A,DDRDS(ON) =9m (max.) @ VGS =10VRDS(ON) =14m (max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3x3A-8_EP ESD Protection Reliable and Rugged(5,6,7,8)DDDD Lead Free and Green Devices Available(RoHS Compliant)Applications(4) G Power Management in Notebook Computer,Portab

 8.1. Size:1359K  globaltech semi
 gsm3326ws.pdf

SM3326NHQA SM3326NHQA

GSM3326WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3326WS, N & P Pair enhancement mode N-ChannelMOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=36m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/10A,RDS(ON)=46m@VGS=4.5V P-ChannelThese devices are particularly suited for low -30V/-8A,RDS(ON)=60m@VGS=-10V voltage

 9.1. Size:167K  sino
 sm3324nhqg.pdf

SM3326NHQA SM3326NHQA

SM3324NHQG N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/77A,DDDD RDS(ON)= 3.6m (Max.) @ VGS=10V RDS(ON)= 5.3m (Max.) @ VGS=4.5VGS Lower Qg and Qgd for high-speed switching SS Lower RDS(ON) to Minimize Conduction LossesDFN3x3D-8_EP ESD Protection(5,6,7,8) 100% UIS + Rg TestedDDDD Reliable and Rugged Lead Free and Green Devic

 9.2. Size:162K  sino
 sm3322nhqa.pdf

SM3326NHQA SM3326NHQA

SM3322NHQA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/70A,DDD RDS(ON)= 4.2m (Max.) @ VGS=10V D RDS(ON)= 6.5m (Max.) @ VGS=4.5VG Reliable and Rugged SSS Lower Qg and Qgd for high-speed switchingDFN3x3A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoH

 9.3. Size:182K  sino
 sm3320nsqg.pdf

SM3326NHQA SM3326NHQA

SM3320NSQA/SM3320NSQGN-Channel Enhancement Mode MOSFETFeatures Pin Description Top View Bottom View Top View Bottom View 30V/49A,DDD DDD DD RDS(ON) = 7.8m(max.) @ VGS =10V RDS(ON) = 12.3m(max.) @ VGS =4.5VGSG SSSSS Integrated Schottky DiodeDFN3x3A-8_EP DFN3x3D-8_EP Avalanche Rated 100% UIS + Rg Tested(5,6,7,8)DD DD Reliable and Rugged

 9.4. Size:252K  sino
 sm3323nhqa.pdf

SM3326NHQA SM3326NHQA

SM3323NHQA N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/54A, DDDD RDS(ON)= 6m (Max.) @ VGS=10V RDS(ON)= 9.7m (Max.) @ VGS=4.5VGSSS Reliable and Rugged Lower Qg and Qgd for high-speed switchingDFN3.3x3.3A-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoHS Comp

 9.5. Size:167K  sino
 sm3323nhqg.pdf

SM3326NHQA SM3326NHQA

SM3323NHQG N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/54A,DDDD RDS(ON)= 6m (Max.) @ VGS=10V RDS(ON)= 9.7m (Max.) @ VGS=4.5VGS Reliable and Rugged SS Lower Qg and Qgd for high-speed switchingDFN3x3D-8_EP Lower RDS(ON) to Minimize Conduction Losses(5,6,7,8) 100% UIS + Rg TestedDDDD Lead Free and Green Devices Available(RoHS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HGP190N15SL

 

 
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