SM3313NSQG MOSFET. Datasheet pdf. Equivalent
Type Designator: SM3313NSQG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 26 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 46 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 185 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0081 Ohm
Package: DFN3X3D-8
SM3313NSQG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM3313NSQG Datasheet (PDF)
1.1. sm3313nsqg.pdf 
Size:180K _sino
SM3313NSQA/SM3313NSQG ® N-Channel Enhancement Mode MOSFET Features Pin Description Top View Bottom View Top View Bottom View 30V/46A, D D D D D D D D RDS(ON) = 8.1mΩ(max.) @ VGS = 10V RDS(ON) = 10.7mΩ(max.) @ VGS = 4.5V G SG S S S S S Provide Excellent Qgd x RDS(ON) DFN3x3A-8_EP DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free
4.1. sm3313psqg.pdf Size:145K _sino
SM3313PSQG ® P-Channel Enhancement Mode MOSFET Features Pin Description D D D D -12V/-37A, RDS(ON) =14mΩ(max.) @ VGS =-4.5V RDS(ON) =19mΩ(max.) @ VGS =-2.5V SG S S RDS(ON) =26mΩ(max.) @ VGS =-1.8V DFN3x3D-8_EP RDS(ON) =36mΩ(max.) @ VGS =-1.5V 100% UIS + Rg Tested ( 5,6,7,8 ) D D D D Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) (4)
5.1. sm3316nsqa.pdf Size:177K _sino
SM3316NSQA ® N-Channel Enhancement Mode MOSFET Features Pin Description D D 30V/25A, D D RDS(ON) =16mΩ(max.) @ VGS =10V RDS(ON) =21.5mΩ(max.) @ VGS =4.5V G S S S 100% UIS + Rg Tested DFN3x3A-8_EP Avalanche Rated Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer,
5.2. sm3316nsqg.pdf Size:167K _sino
SM3316NSQG ® N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/25A, D RDS(ON) =16mΩ(max.) @ VGS =10V RDS(ON) =21.5mΩ(max.) @ VGS =4.5V G S S S Avalanche Rated DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer,
5.3. sm3319naqg.pdf Size:140K _sino
SM3319NAQG ® N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/14A, RDS(ON) = 24mΩ(max.) @ VGS = 10V G RDS(ON) = 35mΩ(max.) @ VGS = 4.5V S S S Avalanche Rated DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) DDDD ESD Protection Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power Management in No
5.4. sm3319nsqa.pdf Size:179K _sino
SM3319NSQA/SM3319NSQG ® N-Channel Enhancement Mode MOSFET Features Pin Description Top View Bottom View Top View Bottom View 30V/23A, D D D D D RDS(ON) = 21mΩ(max.) @ VGS = 10V D D D RDS(ON) = 30mΩ(max.) @ VGS = 4.5V G SG S S S S Provide Excellent Qgd x RDS(ON) S DFN3x3A-8_EP DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and
5.5. sm3317nsqa.pdf Size:176K _sino
® SM3317NSQA N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/34A, RDS(ON) =11.5mΩ(max.) @ VGS =10V G S RDS(ON) =15.5mΩ(max.) @ VGS =4.5V S S Avalanche Rated DFN3x3A-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer
5.6. sm3315nsqg.pdf Size:160K _sino
SM3315NSQG ® N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/54A, RDS(ON) = 6.6mΩ(max.) @ VGS = 10V RDS(ON) = 9.5mΩ(max.) @ VGS = 4.5V G S S S Avalanche Rated DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power Management in Notebook Comput
5.7. sm3317nsqg.pdf Size:167K _sino
® SM3317NSQG N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/34A, D RDS(ON) =11.5mΩ(max.) @ VGS =10V RDS(ON) =15.5mΩ(max.) @ VGS =4.5V G S S S Avalanche Rated DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer,
5.8. sm3314nsqg.pdf Size:157K _sino
SM3314NSQG ® N-Channel Enhancement Mode MOSFET Features Pin Description D D D D 30V/12A, RDS(ON) = 10.5mΩ(max.) @ VGS = 10V G RDS(ON) = 15mΩ(max.) @ VGS = 4.5V S S S Avalanche Rated DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Comput
5.9. sm3319nsqg.pdf Size:179K _sino
SM3319NSQA/SM3319NSQG ® N-Channel Enhancement Mode MOSFET Features Pin Description Top View Bottom View Top View Bottom View 30V/23A, D D D D D RDS(ON) = 21mΩ(max.) @ VGS = 10V D D D RDS(ON) = 30mΩ(max.) @ VGS = 4.5V G SG S S S S Provide Excellent Qgd x RDS(ON) S DFN3x3A-8_EP DFN3x3D-8_EP 100% UIS + Rg Tested Reliable and Rugged (5,6,7,8) D D DD Lead Free and
Datasheet: SM6125NSKP , SM6126NSKP , SM6127NSF , SM6127NSK , SM6127NSKP , SM6127NSUB , SM6127NSUC , SM3308NSQA , IRF3205 , SM3314NSQG , SM3315NSQG , SM3319NAQG , SM3319NSQA , SM3319NSQG , SM3317NSQA , SM3317NSQG , SM3316NSQA .
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