All MOSFET. IRF744 Equivalents Search

PD - 95627 IRF744PbF Lead-Free 8/3/04 Document Number 91056 www.vishay.com 1 IRF744PbF Document Number 91056 www.vishay.com 2 IRF744PbF Document Number 91056 www.vishay.com 3 IRF744PbF Document Number 91056 www.vishay.com 4 IRF744PbF Document Number 91056 www.vishay.com 5 IRF744PbF Document Number 91056 www.vishay.com 6 IRF744PbF Document Number 91056 www.... See More ⇒

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IRF744, SiHF744 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 450 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.63 RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 80 Ease of Paralleling Qgs (nC) 12 Simple Drive Requirements Qgd (nC) 41 Lead (Pb)-free Available Configuration Single DESCRIPTION D TO... See More ⇒

PD - 96124 IRF7416QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D l P Channel MOSFET VDSS = -30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l 150 C Operating Temperature 4 5 G D RDS(on) = 0.02 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications, ... See More ⇒

PD - 95275 IRF7467PbF SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 12m 11A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 l Very Low RDS(on) at 4.5V VGS ... See More ⇒

PD- 91330F IRF7413 SMPS MOSFET HEXFET Power MOSFET VDSS RDS(on) max(mW) ID Applications l High frequency DC-DC converters 30V 11@VGS = 10V 12A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S Effective COSS to Simplify Design, (See D App. Note AN1001) 4 5 G D l Fully Characterized Avalan... See More ⇒

PD - 95305 IRF7433PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 24m @VGS = -4.5V -8.7A l Surface Mount 30m @VGS = -2.5V -7.4A l Available in Tape & Reel 46m @VGS = -1.8V -6.3A l Lead-Free Description A 1 8 S D These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to 2 7 S D achieve ... See More ⇒

PD- 93892C IRF7458 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 8.0m 14A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 Ultra-Low Gate Impedance S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Vol... See More ⇒

PD - 9.1709 IRF7343 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 55V -55V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-C H ANN EL MO SFE T RDS(on) 0.050 0.105 Description Top View Fifth Generation HEXFETs from International Rectifie... See More ⇒

PD - 94311 IRF7476 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency 3.3V and 5V input Point- 12V 8.0m @VGS = 4.5V 15A of-Load Synchronous Buck Converters for Netcom and Computing Applications. Power Management for Netcom, A A Computing and Portable Applications. 1 8 S D 2 7 S D Benefits 3 6 S D Ultra-Low Gate Impedance 4 5 G D ... See More ⇒

PD- 95731 IRF7452PbF Lead-Free www.irf.com 1 8/11/04 IRF7452PbF 2 www.irf.com IRF7452PbF www.irf.com 3 IRF7452PbF 4 www.irf.com IRF7452PbF www.irf.com 5 IRF7452PbF 6 www.irf.com IRF7452PbF SO-8 Package Outline Dimensions are shown in millimeters (inches) INCHES MILLIMETERS DIM D B MIN MAX MIN MAX 5 A .0532 .0688 1.35 1.75 A A1 .0040 .0098 0.10 0.25 b .013 .020 ... See More ⇒

PD - 95017C IRF7413PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D l Surface Mount 2 7 S D VDSS = 30V l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l 100% RG Tested RDS(on) = 0.011 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier util... See More ⇒

PD - 95301 IRF7403PbF HEXFET Power MOSFET l Generation V Technology A l Ultra Low On-Resistance A 1 8 S D l N-Channel Mosfet VDSS = 30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proc... See More ⇒

PD- 95343 IRF7424PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 13.5@VGS = -10V -11A l Surface Mount 22@VGS = -4.5V -8.8A l Available in Tape & Reel l Lead-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to 3 achieve the extremely low on-resista... See More ⇒

PD - 95302 IRF7406PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 l P-Channel Mosfet S D VDSS = -30V 2 7 l Surface Mount S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.045 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces... See More ⇒

PD - 96112 IRF7413QPbF HEXFET Power MOSFET A l Advanced Process Technology A 1 8 S D l Ultra Low On-Resistance 2 7 l N Channel MOSFET S D VDSS = 30V l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150 C Operating Temperature G D RDS(on) = 0.011 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications,... See More ⇒

PD- 95559 IRF7473PbF HEXFET Power MOSFET Applications l Telecom and Data-Com 24 and 48V VDSS RDS(on) max ID input DC-DC converters l Motor Control 100V 26mW@VGS = 10V 6.9A l Uninterrutible Power Supply l Lead-Free Benefits l Ultra Low On-Resistance A A 1 8 l High Speed Switching S D l Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D l Imp... See More ⇒

PD - 95335D IRF7413ZPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Control FET for Notebook Processor 10m @VGS = 10V Power 30V 13A l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL A Converters in Computing, Networking A 1 8 S D and Telecommunication Systems 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance SO-8 l Very Low RDS... See More ⇒

PD- 95304 IRF7421D1PbF FETKY MOSFET / Schottky Diode l Co-packaged HEXFET Power A A 1 8 MOSFET and Schottky Diode A D VDSS = 30V l Ideal For Synchronous Regulator 2 7 S D Applications 3 6 S D RDS(on) = 0.035 l Generation V Technology 4 5 G D l SO-8 Footprint Schottky Vf = 0.39V l Lead-Free Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky... See More ⇒

PD - 95289 IRF7493PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg (typ.) l High frequency DC-DC converters l Lead-Free 15m @VGS=10V 80V 35nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Av... See More ⇒

PD - 95288 IRF7495PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 22m @VGS = 10V 7.3A l Lead-Free Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Avala... See More ⇒

PD - 94880 IRF740LCPbF Lead-Free 12/10/03 Document Number 91052 www.vishay.com 1 IRF740LCPbF Document Number 91052 www.vishay.com 2 IRF740LCPbF Document Number 91052 www.vishay.com 3 IRF740LCPbF Document Number 91052 www.vishay.com 4 IRF740LCPbF Document Number 91052 www.vishay.com 5 IRF740LCPbF Document Number 91052 www.vishay.com 6 IRF740LCPbF Document Nu... See More ⇒

IRF7425PbF HEXFET Power MOSFET VDS -20 V A 1 8 RDS(on) max S D 8.2 (@V = -4.5V) 2 7 GS S D m RDS(on) max 3 6 13 S D (@V = -2.5V) GS 4 5 Qg (typical) 87 nC G D ID -15 A SO-8 Top View (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Co... See More ⇒

FOR REVIEW ONLY PD - 94641 PD - TBD IRF7494 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 44m @VGS = 10V 150V 5.2A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Charact... See More ⇒

PD - 95461 IRF7455PbF Lead-Free www.irf.com 1 6/29/04 IRF7455PbF 2 www.irf.com IRF7455PbF www.irf.com 3 IRF7455PbF 4 www.irf.com IRF7455PbF www.irf.com 5 IRF7455PbF 6 www.irf.com IRF7455PbF SO-8 Package Outline Dimensions are shown in milimeters (inches) INCHES MILLIMETERS DIM D B MIN MAX MIN MAX 5 A .0532 .0688 1.35 1.75 A A1 .0040 .0098 0.10 0.25 b .013 .020 ... See More ⇒

PD - 95633A IRF7420PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 14m @VGS = -4.5V -11.5A l Surface Mount 17.5m @VGS = -2.5V -9.8A l Available in Tape & Reel 26m @VGS = -1.8V -8.1A l Lead-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniq... See More ⇒

PD- 93884C IRF7466 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 30V 12.5@VGS = 10V 11A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for A Computer Processor Power A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very ... See More ⇒

PD - 95202 IRF7402PbF HEXFET Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package Low Profile (... See More ⇒

PD- 93882D IRF7457 SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 7.0m 15A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 S D Ultra-Low RDS(on) 2 7 Very Low Gate Impedance S D Fully Characterized Avalanche Volt... See More ⇒

PD - 95287A IRF7492PbF HEXFET Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 200V 79mW@VGS = 10V 3.7A l Lead-Free Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Ava... See More ⇒

PD- 93913C IRF7470 SMPS MOSFET Applications HEXFET Power MOSFET High Frequency DC-DC Converters VDSS RDS(on) max ID with Synchronous Rectification 40V 13m 10A Benefits Ultra-Low Gate Impedance A A Very Low RDS(on) at 4.5V VGS 1 8 S D 2 7 Fully Characterized Avalanche Voltage S D and Current 3 6 S D 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Paramet... See More ⇒

PD- 91412L IRF7422D2 FETKY TM MOSFET & Schottky Diode A Co-packaged HEXFET Power A 1 8 A D MOSFET and Schottky Diode VDSS = -20V 2 7 Ideal For Buck Regulator Applications A D P-Channel HEXFET 3 6 RDS(on) = 0.09 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKYTM family of Co-pack... See More ⇒

PD - 94531A IRF7475 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Point-of-Load Synchronous Buck Converter for 12V 15m @VGS = 4.5V 19nC Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Current SO-8 ... See More ⇒

PD - 95310 IRF7422D2PbF Lead-Free www.irf.com 1 10/13/04 IRF7422D2PbF 2 www.irf.com IRF7422D2PbF www.irf.com 3 IRF7422D2PbF 4 www.irf.com IRF7422D2PbF www.irf.com 5 IRF7422D2PbF 6 www.irf.com IRF7422D2PbF SO-8 (Fetky) Package Outline INCHES MILLIMET ERS DIM D B MIN MAX MIN MAX 5 A .0532 .0688 1.35 1.75 A A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 8 7 6 5 c... See More ⇒

PD -96259 IRF7406GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A l P-Channel Mosfet 1 8 S D l Surface Mount VDSS = -30V 2 7 S D l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l Lead-Free RDS(on) = 0.045 l Halogen-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize... See More ⇒

PD- 94037A IRF7473 HEXFET Power MOSFET Applications VDSS RDS(on) max ID Telecom and Data-Com 24 and 48V input DC-DC converters 100V 26m @VGS = 10V 6.9A Motor Control Uninterrutible Power Supply Benefits Ultra Low On-Resistance A A High Speed Switching 1 8 S D Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D Im... See More ⇒

IRF7410TRPbF-1 HEXFET Power MOSFET VDS -12 V A 1 8 S D RDS(on) max 7 2 7 (@V = -4.5V) D GS S RDS(on) max 3 6 S 9 m D (@V = -2.5V) GS 4 5 G D RDS(on) max 13 (@V = -1.8V) GS SO-8 Top View Qg (typical) 91 nC ID -16 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount T... See More ⇒

PD- 93898A IRF7451 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.09 3.6A Benefits Low Gate to Drain Charge to Reduce A A 1 8 Switching Losses S D Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characteri... See More ⇒

PD- 94022A IRF7425 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET 20V 8.2@VGS = -4.5V -15A Surface Mount 13@VGS = -2.5V -13A Available in Tape & Reel A 1 8 Description S D These P-Channel HEXFET Power MOSFETs from 2 7 S D International Rectifier utilize advanced processing 3 6 techniques to achieve the ex... See More ⇒

PD- 93899A IRF7453 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 250V 0.23 @VGS = 10V 2.2A Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully C... See More ⇒

PD - 96127A IRF7404QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D VDSS = -20V l P Channel MOSFET 2 7 S D l Surface Mount 3 6 S D l Available in Tape & Reel 4 5 l 150 C Operating Temperature G D RDS(on) = 0.040 l Lead-Free Top View Description These HEXFET Power MOSFET's in package utilize the lastest processing techniqu... See More ⇒

PD- 94024A IRF7424 HEXFET Power MOSFET Ultra Low On-Resistance ) VDSS RDS(on) max (m ) ID ) ) ) P-Channel MOSFET -30V 13.5@VGS = -10V -11A Surface Mount 22@VGS = -4.5V -8.8A Available in Tape & Reel A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to 3 achieve the extremely low on-... See More ⇒

PD - 9.1613A IRF7413A PRELIMINARY HEXFET Power MOSFET A Generation V Technology A 1 8 S D Ultra Low On-Resistance 2 7 N-Channel Mosfet VDSS = 30V S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.0135 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing... See More ⇒

PD- 93895 IRF7464 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.73 1.2A Benefits Low Gate to Drain Charge to Reduce A A 1 8 S D Switching Losses 2 7 Fully Characterized Capacitance Including S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage... See More ⇒

IRF7416PbF-1 HEXFET Power MOSFET VDS -30 V A 1 8 S D RDS(on) max 0.020 2 7 (@V = -10V) S D GS Qg (typical) 61 nC 3 6 S D ID 4 5 -10 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen... See More ⇒

IRF7455PbF-1 SMPS MOSFET HEXFET Power MOSFET VDS 30 V A A 1 8 S D RDS(on) max 0.0075 2 7 (@V = 10V) S D GS Qg (typical) 37 nC 3 6 S D ID 4 5 15 A G D (@T = 25 C) A SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Ex... See More ⇒

IRF7473PbF-1 HEXFET Power MOSFET A VDS 100 V A 1 8 S D RDS(on) max 26 m 2 7 (@V = 10V) S D GS Qg (typical) 61 nC 3 6 S D ID 4 5 6.9 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmen... See More ⇒

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 ... See More ⇒

PD - 96247 IRF7410GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 7m @VGS = -4.5V -16A l Surface Mount 9m @VGS = -2.5V -13.6A l Available in Tape & Reel 13m @VGS = -1.8V -11.5A l Lead-Free l Halogen-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing ... See More ⇒

PD - 95204 IRF740SPbF Lead-Free 4/29/04 Document Number 91055 www.vishay.com 1 IRF740SPbF Document Number 91055 www.vishay.com 2 IRF740SPbF Document Number 91055 www.vishay.com 3 IRF740SPbF Document Number 91055 www.vishay.com 4 IRF740SPbF Document Number 91055 www.vishay.com 5 IRF740SPbF Document Number 91055 www.vishay.com 6 IRF740SPbF D2Pak Package Outli... See More ⇒

PD- 91411C IRF7421D1 PRELIMINARY FETKY MOSFET / Schottky Diode Co-packaged HEXFET Power A A 1 8 MOSFET and Schottky Diode A D VDSS = 30V Ideal For Synchronous Regulator 2 7 S D Applications 3 6 S D RDS(on) = 0.035 Generation V Technology 4 5 G D SO-8 Footprint Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEX... See More ⇒

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic... See More ⇒

IRF7420PbF-1 HEXFET Power MOSFET A 1 8 VDS -12 V S D RDS(on) max 2 7 S D 14 m (@V = -4.5V) GS 3 6 S D RDS(on) max 17.5 m 4 5 (@V = -2.5V) GS G D RDS(on) max 26 m SO-8 Top View (@V = -1.8V) GS Qg (typical) 38 nC ID -11.5 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Sur... See More ⇒

PD - 95724 IRF7401PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D VDSS = 20V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 S D l Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022 l Fast Switching l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proc... See More ⇒

PD - 95284 IRF7490PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg l Lead-Free 100V 39mW@VGS=10V 37nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche... See More ⇒

PD- 92005 SMPS MOSFET IRF740AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanch... See More ⇒

PD- 93893A IRF7450 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.17 @VGS = 10V 2.5A Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully C... See More ⇒

IRF7413PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 0.011 2 7 S D (@V = 10V) GS 3 6 Qg (typical) 52 nC S D ID 4 5 G D 13 A (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environme... See More ⇒

PD - 94025 IRF7410 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 7m @VGS = -4.5V -16A Surface Mount 9m @VGS = -2.5V -13.6A Available in Tape & Reel 13m @VGS = -1.8V -11.5A Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the extrem... See More ⇒

PD - 95281A IRF7484PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive VDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14A Benefits l Advanced Process Technology l Ultra Low On-Resistance l Fast Switching l Repetitive Avalanche Allowed up to Tjmax. A A 1 8 l Lead-Free S D 2 7 S D Description 3 6 S D This Stripe Planar design of HEXFET Power 4 5 MOSFETs ... See More ⇒

PD - 94507 IRF7488 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 80V 29mW@VGS=10V 38nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D and... See More ⇒

PD- 93840B IRF7456 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 20V 0.0065 16A with Synchronous Rectification Benefits A A Ultra-Low RDS(on) at 4.5V VGS 1 8 S D Low Charge and Low Gate Impedance to 2 7 S D Reduce Switching Losses 3 6 S D Fully Characterized Avalanche Voltage 4 5 and Current G D SO-8 Top View ... See More ⇒

PD- 96128 SMPS MOSFET IRF7478QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l N Channel MOSFET 60V 26@VGS = 10V 4.2A l Surface Mount 30@VGS = 4.5V 3.5A l Available in Tape & Reel l 150 C Operating Temperature l Automotive [Q101] Qualified A A l Lead-Free 1 8 S D Description 2 7 S D Specifically designed for Autom... See More ⇒

PD- 95334 IRF7477PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Synchronous Buck VDSS RDS(on) max (mW) ID Converters for Computers and 30V 8.5@VGS = 10V 14A Communications 10@VGS = 4.5V 11A l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 l Very Low RDS(on) S D l Fully Characterized Avalanche Voltage 4 5 G D and Current SO-8... See More ⇒

PD - 95344 IRF7468PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max(mW) ID Converters with Synchronous Rectification 40V 15.5@VGS = 10V 9.4A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D 2 7 Benefits S D 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l V... See More ⇒

IRF7469PbF-1 HEXFET Power MOSFET VDS 40 V RDS(on) max A A 17 1 8 S D (@V = 10V) GS m 2 7 RDS(on) max S D 21 (@V = 4.5V) GS 3 6 S D Qg (typical) 15 nC 4 5 G D ID 9.0 A SO-8 (@T = 25 C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS C... See More ⇒

PD - 96113A IRF7452QPbF HEXFET Power MOSFET l Advanced Process Technology VDSS RDS(on) max ID l Ultra Low On-Resistance l N Channel MOSFET 100V 0.060 4.5A l Surface Mount l Available in Tape & Reel l 150 C Operating Temperature l Lead-Free A Description A 1 8 S D These HEXFET Power MOSFET's in SO-8 2 7 S D package utilize the lastest processing techniques 3 6 to ac... See More ⇒

PD - 95459A IRF7459PbF SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.0m 12A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits A A 1 8 S D l Ultra-Low Gate Impedance 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 ... See More ⇒

PD -94056 IRF7433 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 24m @VGS = -4.5V -8.7A Surface Mount 30m @VGS = -2.5V -7.4A Available in Tape & Reel 46m @VGS = -1.8V -6.3A Description A 1 8 S D These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to 2 7 S D achieve the extremely low on-... See More ⇒

PD- 95725 IRF7451PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.09W 3.6A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A A 1 8 Switching Losses S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D l Fully Characterized... See More ⇒

PD-95274 IRF7465PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 150V 0.28W@VGS = 10V 1.9A l Lead-Free Benefits A l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D l Fully Chara... See More ⇒

PD- 94828 SMPS MOSFET IRF740APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanch... See More ⇒

PD- 94094A IRF7477 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max (m ) ID ) ) ) High Frequency Synchronous Buck 30V 8.5@VGS = 10V 14A Converters for Computers and 10@VGS = 4.5V 11A Communications Benefits A A Ultra-Low Gate Impedance 1 8 S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G... See More ⇒

PD- 95726 SMPS MOSFET IRF7471PbF Applications l High Frequency Isolated DC-DC HEXFET Power MOSFET Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use l High Frequency Buck Converters for 40V 13m 10A Computer Processor Power l Lead-Free Benefits A A 1 8 l Ultra-Low Gate Impedance S D l Very Low RDS(on) 2 7 S D l Fully Characte... See More ⇒

PD - 95248 SMPS MOSFET IRF7463PbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial use 30V 8m 14A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits A A 1 8 S D l Ultra-Low Gate Impedance 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S... See More ⇒

IRF7404TRPbF-1 HEXFET Power MOSFET VDS -20 V A 1 8 S D RDS(on) max 0.04 2 7 (@V = -4.5V) S D GS Qg 50 nC 3 6 S D ID 4 5 -6.7 A G D (@T = 25 C) A Top View SO-8 Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Frie... See More ⇒

PD- 95286 IRF7469PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max(mW) ID l High Frequency Isolated DC-DC 40V 17@VGS = 10V 9.0A Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for A Computer Processor Power A 1 8 S D l Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance l Ver... See More ⇒

PD - 94498 IRF7492 HEXFET Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters 200V 79m @VGS = 10V 3.7A Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 App. Note AN1001) 5 G D Fully Characterized A... See More ⇒

PD - 95308 IRF7460PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max(mW) ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 10@VGS = 10V 12A l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Very Low RDS(o... See More ⇒

PD- 93897C IRF7452 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.060 4.5A Benefits Low Gate to Drain Charge to Reduce A A 1 8 Switching Losses S D 2 7 Fully Characterized Capacitance Including S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Volta... See More ⇒

PD - 95283 IRF7488PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High frequency DC-DC converters 80V 29mW@VGS=10V 38nC l Lead-Free A Benefits A 1 8 S D l Low Gate-to-Drain Charge to Reduce 2 7 S D Switching Losses 3 6 S D l Fully Characterized Capacitance Including 4 5 G D Effective COSS to Simplify Design, (See App. Note AN1001) SO-8 Top View l Fully Cha... See More ⇒

IRF7401PbF-1 HEXFET Power MOSFET VDS 20 V A A 1 8 S D RDS(on) max 0.022 2 7 (@V = 4.5V) S D GS Qg 48 nC 3 6 S D ID 4 5 8.7 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Fri... See More ⇒

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and 2 ... See More ⇒

PD-93896 IRF7465 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 150V 0.28 @VGS = 10V 1.9A Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully Cha... See More ⇒

IRF7425PbF-1 HEXFET Power MOSFET VDS -20 V A 1 8 S D RDS(on) max 8.2 2 7 (@V = -4.5V) S D GS m RDS(on) max 3 6 S D 13 (@V = -2.5V) GS 4 5 G D Qg (typical) 87 nC ID SO-8 -15 A Top View (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoH... See More ⇒

PD - 94537 IRF7491 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 80V 16m @VGS = 10V 9.7A Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage SO-8 ... See More ⇒

PD- 95307 IRF7453PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 250V 0.23W@VGS = 10V 2.2A l Lead-Free Benefits A l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D l Fully Char... See More ⇒

PD - 94446A IRF7484 Typical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air Bag VDSS RDS(on) max (mW) ID Benefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax A A 1 8 S D 2 7 S D Description 3 6 S D Specifically designed for Automotive applications... See More ⇒

PD - 9.1246C IRF7404 HEXFET Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a... See More ⇒

PD - 95249A IRF7456PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency DC-DC Converters 20V 0.0065 16A with Synchronous Rectification l Lead-Free Benefits A A l Ultra-Low RDS(on) at 4.5V VGS 1 8 S D l Low Charge and Low Gate Impedance to 2 7 S D Reduce Switching Losses 3 6 S D l Fully Characterized Avalanche Voltage 4 5 and Curren... See More ⇒

PD- 94055A IRF7478 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max (m ) ID ) ) ) High frequency DC-DC converters 60V 26@VGS = 10V 4.2A 30@VGS = 4.5V 3.5A Benefits A A 1 8 S D Low Gate to Drain Charge to Reduce 2 7 Switching Losses S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 5 G D A... See More ⇒

StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 1.7m Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies ID (Silicon... See More ⇒

IRF7406TRPbF-1 HEXFET Power MOSFET VDS -30 V A 1 8 S D RDS(on) max 0.045 2 7 (@V = -10V) S D GS Qg (max) 59 nC 3 6 S D ID 4 5 G D -5.8 A (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environment... See More ⇒

PD- 95268 IRF7458PbF SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 8.0m 14A for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 Benefits S D 2 7 S D l Ultra-Low Gate Impedance 3 6 l Very Low RDS(on) S D l Ful... See More ⇒

PD- 95273 IRF7464PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.73 1.2A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A A 1 8 S D Switching Losses 2 7 l Fully Characterized Capacitance S D Including Effective COSS to Simplify 3 6 S D Design, (See App. Note AN1001) 4 5 G D l Fully Characteriz... See More ⇒

IRF7478PbF-1 SMPS MOSFET HEXFET Power MOSFET A VDS 60 V A 1 8 S D RDS(on) max 26 2 7 (@V = 10V) S D GS m RDS(on) max 3 6 S D 30 (@V = 4.5V) GS 4 5 G D Qg (typical) 21 nC ID SO-8 7.0 A Top View (@T = 25 C) A Applications l High frequency DC-DC converters Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible wit... See More ⇒

PD- 95306 IRF7450PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.17W@VGS = 10V 2.5A l Lead-Free Benefits A l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D l Fully Char... See More ⇒

PD - 9.1244C IRF7401 HEXFET Power MOSFET Generation V Technology A A 1 8 Ultra Low On-Resistance S D VDSS = 20V 2 7 N-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.022 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ... See More ⇒

PD - 94278 IRF7420 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 14m @VGS = -4.5V -11.5A Surface Mount 17.5m @VGS = -2.5V -9.8A Available in Tape & Reel 26m @VGS = -1.8V -8.1A Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the ex... See More ⇒

PD - 93851A IRF7402 HEXFET Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (... See More ⇒

PD - 93886D IRF7460 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 20V 10@VGS = 10V 12A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power A A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very L... See More ⇒

PD - 93914D IRF7468 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 40V 15.5@VGS = 10V 9.4A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power A A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Ver... See More ⇒

PD - 95278 IRF7475PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Point-of-Load Synchronous Buck Converter for 12V 15m @VGS = 4.5V 19nC Applications in Networking & Computing Systems. A l Lead-Free A 1 8 S D 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 l Fully Characterized Avalanche Voltage ... See More ⇒

PD - 95203 IRF7404PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel Mosfet VDSS = -20V 2 7 S D l Surface Mount 3 6 S l Available in Tape & Reel D 4 5 l Dynamic dv/dt Rating G D RDS(on) = 0.040 l Fast Switching Top View l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces... See More ⇒

AUTOMOTIVE GRADE PD - 97757 AUIRF7484Q Features HEXFET Power MOSFET l Advanced Planar Technology A A 1 8 l Low On-Resistance S D V(BR)DSS 40V 2 7 S D l 150 C Operating Temperature 3 6 S D RDS(on) max. 10m l Fast Switching 4 5 G D l Fully Avalanche Rated ID 14A Top View l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* ... See More ⇒

PD- 93842B IRF7455 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 30V 0.0075 15A with Synchronous Rectification Benefits Ultra-Low RDS(on) at 4.5V VGS A A Low Charge and Low Gate Impedance to 1 8 S D Reduce Switching Losses 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View ... See More ⇒

AUTOMOTIVE GRADE AUIRF7416Q HEXFET Power MOSFET Features l Advanced Process Technology A 1 8 S D V(BR)DSS -30V l Low On-Resistance 2 7 S D l Logic Level Gate Drive 3 6 S D RDS(on) max. 0.02 l P-Channel MOSFET 4 5 G D l Dynamic dV/dT Rating ID -10A Top View l 150 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free, RoHS Compliant l Autom... See More ⇒

PD - 9.1356D IRF7416 HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D P-Channel Mosfet VDSS = -30V 2 7 S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 Dynamic dv/dt Rating G D RDS(on) = 0.02 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ach... See More ⇒

PD - 94803A AUTOMOTIVE MOSFET IRF7484Q Typical Applications Relay replacement HEXFET Power MOSFET Anti-lock Braking System Air Bag VDSS RDS(on) max (mW) ID Benefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax A A 1 8 S D 2 7 S D Description 3 6 S D Specifically designed for Aut... See More ⇒

PD - 96028B IRF7410PbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max ID l P-Channel MOSFET -12V 7m @VGS = -4.5V -16A l Surface Mount 9m @VGS = -2.5V -13.6A l Available in Tape & Reel 13m @VGS = -1.8V -11.5A l Lead-Free Description A These P-Channel HEXFET Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques ... See More ⇒

PD- 93951A IRF7469 SMPS MOSFET HEXFET Power MOSFET Applications ) VDSS RDS(on) max(m ) ID ) ) ) High Frequency Isolated DC-DC 40V 17@VGS = 10V 9.0A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for A Computer Processor Power A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very Lo... See More ⇒

PD - 96124 IRF7416QPbF HEXFET Power MOSFET l Advanced Process Technology A 1 8 l Ultra Low On-Resistance S D l P Channel MOSFET VDSS = -30V 2 7 S D l Surface Mount 3 6 l Available in Tape & Reel S D l 150 C Operating Temperature 4 5 G D RDS(on) = 0.02 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applications, ... See More ⇒

... See More ⇒

PD- 95730 IRF7466PbF SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max(mW) ID for Telecom and Industrial Use 30V 12.5@VGS = 10V 11A l High Frequency Buck Converters for Computer Processor Power l Lead-Free A A 1 8 S D Benefits 2 7 S D l Ultra-Low Gate Impedance 3 6 S D l Very Low RDS... See More ⇒

PD - 96250 IRF7413GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A A 1 8 l N-Channel Mosfet S D l Surface Mount 2 7 S D VDSS = 30V l Available in Tape & Reel l Dynamic dv/dt Rating 3 6 S D l Fast Switching 4 5 G D l 100% RG Tested RDS(on) = 0.011 l Lead-Free l Halogen-Free Top View Description Fifth Generation HEXFETs from International... See More ⇒

PD - 95349C IRF7494PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 44m 150V @VGS = 10V 5.1A l Lead-Free Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized... See More ⇒

PD- 95276 IRF7470PbF SMPS MOSFET Applications HEXFET Power MOSFET l High Frequency DC-DC Converters VDSS RDS(on) max ID with Synchronous Rectification 40V 13m 10A l Lead-Free Benefits l Ultra-Low Gate Impedance A A 1 8 l Very Low RDS(on) at 4.5V VGS S D 2 7 S D l Fully Characterized Avalanche Voltage and Current 3 6 S D 4 5 G D SO-8 Top View Absolute Maximum Rati... See More ⇒

IRF7493PbF-1 HEXFET Power MOSFET VDS 80 V A A 1 8 S D RDS(on) max 15 m 2 7 (@V = 10V) GS S D Qg (typical) 35 nC 3 6 S D ID 4 5 9.3 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmenta... See More ⇒

PD- 94097 IRF7474 HEXFET Power MOSFET Applications VDSS RDS(on) max ID Telecom and Data-Com 24 and 48V 100V 63m @VGS = 10V 4.5A input DC-DC converters Motor Control Uninterruptible Power Supply Benefits A Low On-Resistance A 1 8 S D High Speed Switching 2 7 Low Gate Drive Current Due to Improved S D Gate Charge Characteristic 3 6 S D Improv... See More ⇒

PD- 93843A IRF7463 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 30V 0.008 14A with Synchronous Rectification Benefits Ultra-Low RDS(on) at 4.5V VGS Low Charge and Low Gate Impedance to Reduce Switching Losses Fully Characterized Avalanche Voltage and Current SO-8 Absolute Maximum Ratings Parameter Max. Units ID @ TA... See More ⇒

PD-96256 IRF7424GPbF HEXFET Power MOSFET l Ultra Low On-Resistance VDSS RDS(on) max (mW) ID l P-Channel MOSFET -30V 13.5@VGS = -10V -11A l Surface Mount 22@VGS = -4.5V -8.8A l Available in Tape & Reel l Lead-Free l Halogen-Free A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to 3 achieve the extremel... See More ⇒

PD - 9.1245B PRELIMINARY IRF7403 HEXFET Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel Mosfet VDSS = 30V 2 7 S D Surface Mount 3 6 Available in Tape & Reel S D Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te... See More ⇒

PD - 94872 IRF740PbF Lead-Free 12/5/03 Document Number 91053 www.vishay.com 1 IRF740PbF Document Number 91053 www.vishay.com 2 IRF740PbF Document Number 91053 www.vishay.com 3 IRF740PbF Document Number 91053 www.vishay.com 4 IRF740PbF Document Number 91053 www.vishay.com 5 IRF740PbF Document Number 91053 www.vishay.com 6 IRF740PbF TO-220AB Package Outline ... See More ⇒

PD- 95032 SMPS MOSFET IRF7457PbF HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 7.0m 15A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits A A 1 8 S D l Ultra-Low RDS(on) 2 7 l Very Low Gate Impedance S D l Fully Character... See More ⇒

PD- 94036B SMPS MOSFET IRF7471 Applications HEXFET Power MOSFET High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 40V 13m 10A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 Ultra-Low Gate Impedance S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Volt... See More ⇒

AUTOMOTIVE GRADE AUIRF7478Q Features HEXFET Power MOSFET Advanced Planar Technology A A V(BR)DSS 1 8 60V Low On-Resistance S D Logic Level Gate Drive 2 7 S D RDS(on) typ. 20m Dynamic dV/dT Rating 3 6 S D 150 C Operating Temperature max. 26m Fast Switching 4 5 G D Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 7.0A Top View Lead-Free,... See More ⇒

PD - 96252A IRF7416GPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance A 1 8 S D l P-Channel Mosfet VDSS = -30V l Surface Mount 2 7 S D l Available in Tape & Reel 3 6 l Dynamic dv/dt Rating S D l Fast Switching 4 5 G D l Lead-Free RDS(on) = 0.02 l Halogen-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize... See More ⇒

PD - 94508 IRF7490 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 100V 39mW@VGS=10V 37nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D an... See More ⇒

PD - 95279 IRF7476PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency 3.3V and 5V input Point- 12V 8.0mW@VGS = 4.5V 15A of-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, A A Computing and Portable Applications. 1 8 S D l Lead-Free 2 7 S D 3 6 S D Benefits 4 5 G D l Ultra-Low Gate Impedance SO... See More ⇒

PD- 95280 IRF7478PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max (mW) ID l High frequency DC-DC converters 60V 26@VGS = 10V 4.2A l Lead-Free 30@VGS = 4.5V 3.5A Benefits A A 1 8 S D l Low Gate to Drain Charge to Reduce 2 7 Switching Losses S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 5 G D App. Note... See More ⇒

PD - 94654 PROVISIONAL IRF7493 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 80V 15m @VGS = 10V 9.2A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Avalanch... See More ⇒

PD - 95137A IRF7416PbF l Generation V Technology HEXFET Power MOSFET l Ultra Low On-Resistance A l P-Channel Mosfet 1 8 S D l Surface Mount VDSS = -30V 2 7 S D l Available in Tape & Reel 3 6 l Dynamic dv/dt Rating S D l Fast Switching 4 5 G D RDS(on) = 0.02 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces... See More ⇒

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PD - 93883B IRF7467 SMPS MOSFET Applications HEXFET Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 12m 11A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A Ultra-Low Gate Impedance 1 8 S D Very Low RDS(on) at 4.5V VGS 2 7 S D Fully Characterized Ava... See More ⇒

SMPS MOSFET IRF7456PbF-1 HEXFET Power MOSFET VDS 20 V A A RDS(on) max 1 8 S D 0.0065 (@V = 10V) GS 2 7 S D Qg (typical) 41 nC 3 6 S D ID 16 A 4 5 G D (@T = 25 C) A SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Exi... See More ⇒

IRF7457PbF-1 HEXFET Power MOSFET VDS 20 V RDS(on) max A A 7.0 m 1 8 S D (@V = 10V) GS 2 7 RDS(on) max S D 10.5 m (@V = 4.5V) 3 6 GS S D Qg (typical) 28 nC 4 5 G D ID 15 A SO-8 (@T = 25 C) A Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS... See More ⇒

PD - 96249 IRF7413ZGPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Control FET for Notebook Processor 10m @VGS = 10V Power 30V 13A l Control and Synchronous Rectifier MOSFET for Graphics Cards and POL A Converters in Computing, Networking A 1 8 S D and Telecommunication Systems 2 7 S D 3 6 S D Benefits 4 5 l Ultra-Low Gate Impedance G D l Very Low RDS(on) ... See More ⇒

PD- 93885B IRF7459 SMPS MOSFET Applications HEXFET Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.0m 12A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 S D Ultra-Low Gate Impedance 2 7 S D Very Low RDS(on) at 4.5V VGS 3 6 Fully Characteriz... See More ⇒

PD - 9.1247C IRF7406 PRELIMINARY HEXFET Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D VDSS = -30V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.045 Dynamic dv/dt Rating Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing te... See More ⇒

StrongIRFET IRF7483MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 1.7m Half-bridge and full-bridge topologies max 2.3m Synchronous rectifier applications Resonant mode power supplies ID (Silicon... See More ⇒

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IRF740S N - CHANNEL 400V - 0.48 - 10A- D2PAK PowerMESH MOSFET TYPE VDSS RDS(on) ID IRF740S 400 V ... See More ⇒

IRF740 N - CHANNEL 400V - 0.48 - 10 A - TO-220 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRF740 400 V ... See More ⇒

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Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.437 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒

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IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal design VDS (V) at TJ max. 450 - Low area specific on-resistance RDS(on) max. ( ) at 25 C VGS = 10 V 0.6 - Low input capacitance (Ciss) Available Qg max. (nC) 30 - Reduced capacitive switching losses Qgs (nC) 4 - High body diode ruggedness Qgd (nC) 7 - Avalanche energy rated (U... See More ⇒

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) ( )VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configur... See More ⇒

IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt Rating Qgs (nC) 9.0 Repetitive Avalanche Rated Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Sin... See More ⇒

IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Comp... See More ⇒

IRF740AS, SiHF740AS, IRF740AL, SiHF740AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 400 Definition RDS(on) ( )VGS = 10 V 0.55 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 36 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.9 Ruggedness Qgd (nC) 16 Fully Characterized Capac... See More ⇒

IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES... See More ⇒

IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.55 Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operation Qgd (nC) 19 Repetitive Avalanche Rated Comp... See More ⇒

IRF740S, SiHF740S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 400 Surface Mount RDS(on) ( )VGS = 10 V 0.55 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt Rating Qgs (nC) 9.0 Repetitive Avalanche Rated Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Sin... See More ⇒

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) ( )VGS = 10 V 0.55 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configur... See More ⇒

IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.55 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DES... See More ⇒

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic... See More ⇒

AUTOMOTIVE GRADE AUIRF7484Q HEXFET Power MOSFET Features Advanced Planar Technology A VDSS A 1 8 Low On-Resistance 40V S D 2 7 S D 150 C Operating Temperature RDS(on) max. 3 6 S D Fast Switching 10m 4 5 G D Fully Avalanche Rated ID Top View Repetitive Avalanche Allowed up to Tjmax 14A Lead-Free, RoHS Compliant Auto... See More ⇒

Spec. No. MOS200512 HI-SINCERITY Issued Date 2005.09.01 Revised Date 2005.09.22 MICROELECTRONICS CORP. Page No. 1/4 HIRF740 Series Pin Assignment HIRF740 / HIRF740F Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N-Channel MOSFETs provide the designer with the best combination o... See More ⇒

IRF740 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi... See More ⇒

SMD Type MOSFET N-Channel MOSFET IRF7413 (KRF7413) SOP-8 Features VDS (V) = 30V ID = 12 A (VGS = 10V) 1.50 0.15 RDS(ON) 11m (VGS = 10V) 1 8 S D 1 Source 5 Drain 2 7 S D 6 Drain 2 Source 3 6 7 Drain S D 3 Source 8 Drain 4 Gate 4 5 G D Top View Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V ... See More ⇒

SMD Type MOSFET N-Channel MOSFET IRF7476 (KRF7476) SOP-8 Features VDS (V) = 12V ID = 15 A (VGS = 10V) 1.50 0.15 RDS(ON) 8m (VGS = 4.5V) RDS(ON) 30m (VGS = 2.8V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate 1 8 S D 2 7 S D 3 6 S D 4 5 G D Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain... See More ⇒

IRF7468TR www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectifi... See More ⇒

IRF7475TRP www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch... See More ⇒

IRF7455TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch ... See More ⇒

IRF7416TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6... See More ⇒

IRF7413TRPBF www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch... See More ⇒

IRF7470TRPBF&-10 www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous ... See More ⇒

IRF7463TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch ... See More ⇒

IRF7473TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.040 at VGS = 10 V 6.4 Extremely Low Qgd for Switching Losses 100 23 nC 0.047 at VGS = 8 V 5.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATIONS SO... See More ⇒

IRF7404TR www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition a 0.015 at VGS = - 4.5 V TrenchFET Power MOSFET - 13 a 100 % Rg Tested 0.026 at VGS = - 2.5 V - 20 20 nC - 10 Built in ESD Protection with Zener Diode 0.065 at VGS = - 1.8 V - 8 Typical... See More ⇒

IRF7478TR www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET 0.025 at VGS = 10 V 7.6 60 10.5 nC Optimized for Low Side Synchronous 0.030 at VGS = 4.5 V 6.5 Rectifier Operation 100 % Rg and UIS Tested APPLICATIONS D CCFL ... See More ⇒

IRF7469TR www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectifi... See More ⇒

IRF7425TR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G ... See More ⇒

IRF7424TRPBF www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop... See More ⇒

IRF7471TR www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.012 at VGS = 10 V TrenchFET Power MOSFET 12 40 15 nC 100 % Rg Tested 0.012 at VGS = 4.5 V 9 100 % UIS Tested Compliant to RoHS directive 2002/95/EC APPLICATIONS Synchronous Rectifi... See More ⇒

IRF7467TR www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S... See More ⇒

IRF7410TR www.VBsemi.tw P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0050 at VGS = - 4.5 V - 16 TrenchFET Power MOSFET 0.0065 at VGS = - 2.5 V - 12 - 15 Compliant to RoHS Directive 2002/95/EC 0.0100 at VGS = - 1.8 V - 13 APPLICATIONS Load Switch Battery Switch S ... See More ⇒

Silicon N-Channel Power MOSFET Description The IRF740 uses advanced technology and design to provide excellent RDS(ON). It can be used in a wide variety of applications. General Features VDS=400V,ID=10A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application Adapter and charger Electrical C... See More ⇒

isc N-Channel Mosfet Transistor IRF740A FEATURES Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply Uninterruptable power supply High speed power switching ABSOLUTE MAXIMUM... See More ⇒

isc N-Channel MOSFET Transistor IRF740FI DESCRIPTION Drain Current I = 5.5A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltag... See More ⇒

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF7473TRPBF FEATURES With SOP-8 packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

isc N-Channel MOSFET Transistor IRF740 FEATURES Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply Uninterruptable power supply High speed power switching ABSOLUTE MAXIMUM ... See More ⇒