SM4042DSK
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM4042DSK
Marking Code: 4042DS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.31
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 6.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.7
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 100
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018
Ohm
Package:
SOP8
SM4042DSK
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM4042DSK
Datasheet (PDF)
..1. Size:272K sino
sm4042dsk.pdf
SM4042DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 Channel 1D1D2D240V/6.5A,RDS(ON) = 18m (max.) @ VGS = 10VS1RDS(ON) = 25m (max.) @ VGS = 4.5VG1S2 Channel 2 (ESD Protection)G2Top View of SOP-840V/7.4A,RDS(ON) = 14m (max.) @ VGS =10V(8) (7) (6) (5)RDS(ON) = 18m (max.) @ VGS =4.5VD1 D1 D2 D2 100% UIS + Rg Tested Reliable an
9.1. Size:237K sino
sm4041dsk.pdf
SM4041DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 40V/7.8A,D1D2D2RDS(ON) = 14.5m (max.) @ VGS = 10VRDS(ON) = 18m (max.) @ VGS = 4.5VS1 100% UIS + Rg TestedG1S2G2 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications Car charger.(2) (4) Power Man
9.2. Size:235K sino
sm4040dsk.pdf
SM4040DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1 40V/7A,D1D2D2RDS(ON) = 22m (max.) @ VGS = 10VRDS(ON) = 27m (max.) @ VGS = 4.5VS1 100% UIS + Rg TestedG1S2G2 Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications Power Management in Note book.(2) (
9.3. Size:913K globaltech semi
gsm4048ws.pdf
GSM4048WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4048WS, N-Channel enhancement mode 30V/15A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=10m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
Datasheet: IRFP344
, IRFP350
, IRFP350A
, IRFP350FI
, IRFP350LC
, IRFP351
, IRFP352
, IRFP353
, 2SK3568
, IRFP360
, IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
.