All MOSFET. IRF750A Datasheet

 

IRF750A Datasheet and Replacement


   Type Designator: IRF750A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 101 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220
 

 IRF750A substitution

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IRF750A Datasheet (PDF)

 ..1. Size:942K  samsung
 irf750a.pdf pdf_icon

IRF750A

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 8.1. Size:213K  international rectifier
 irf7507pbf.pdf pdf_icon

IRF750A

PD - 95218IRF7507PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8l Ultra Low On-Resistance S1 D1N-Ch P-Chl Dual N and P Channel MOSFET 2 7G1 D1l Very Small SOIC Package3 6VDSS 20V -20VS2 D2l Low Profile (

 8.2. Size:217K  international rectifier
 irf7509.pdf pdf_icon

IRF750A

PD - 91270JIRF7509HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFET1 8 Ultra Low On-Resistance S1 D1N-Ch P-Ch Dual N and P Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6 VDSS 30V -30VS2 D2 Low Profile (

 8.3. Size:115K  international rectifier
 irf7504.pdf pdf_icon

IRF750A

PD - 9.1267GIRF7504HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1 Dual P-Channel MOSFETVDSS = -20V2 7G1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (

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History: TF2302A

Keywords - IRF750A MOSFET datasheet

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