2N7106 MOSFET. Datasheet pdf. Equivalent

   Type Designator: 2N7106
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.05 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 0.6 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 70 Ohm
   Package: TO72

2N7106 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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