All MOSFET. SM2211PSQG Datasheet

 

SM2211PSQG MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM2211PSQG
   Marking Code: 2211B
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 7.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 18 nC
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: DFN2X2A-6

 SM2211PSQG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM2211PSQG Datasheet (PDF)

 ..1. Size:256K  sino
 sm2211psqg.pdf

SM2211PSQG SM2211PSQG

SM2211PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -30V/-7.9A,DDRDS(ON) = 27m (max.) @ VGS =-10VRDS(ON) = 42m (max.) @ VGS =-4.5VGSPin 1DD 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DD DD(RoHS Compliant)Applications(3)G Power Management in Notebook Computer,(4)SPort

 9.1. Size:182K  sino
 sm2217psqg.pdf

SM2211PSQG SM2211PSQG

SM2217PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-9.9A,SDRDS(ON) = 17m(max.) @ VGS =-4.5V DDRDS(ON) = 25m(max.) @ VGS =-2.5VRDS(ON) = 40m(max.) @ VGS =-1.8V GSPin 1DD Reliable and RuggedDFN2x2-6 Lead Free and Green Devices Available(RoHS Compliant)(1,2,5,6)DDDD HBM ESD protection level pass 2KVNote : The diode connec

 9.2. Size:258K  sino
 sm2210nsqg.pdf

SM2211PSQG SM2211PSQG

SM2210NSQGN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD 12V/12A,DDRDS(ON) = 4.3m (max.) @ VGS =4.5VRDS(ON) = 5.6m (max.) @ VGS =2.5VG SPin 1DD 100% UIS + Rg TestedDFN2x2A-6_EP Reliable and Rugged Lead Free and Green Devices Available(1,2,5,6)DDDD (RoHS Compliant)Applications(3)G Battery Management Application. Power Management Fu

 9.3. Size:181K  sino
 sm2213psqg.pdf

SM2211PSQG SM2211PSQG

SM2213PSQGP-Channel Enhancement Mode MOSFETFeatures Pin Description -8V/-9.4A,SDDRDS(ON) = 19m(max.) @ VGS =-4.5V DRDS(ON) = 24m(max.) @ VGS =-2.5VGSRDS(ON) = 33m(max.) @ VGS =-1.8V Pin 1DDRDS(ON) = 45m(max.) @ VGS =-1.5VDFN2x2-6RDS(ON) = 90m(max.) @ VGS =-1.2V Reliable and Rugged (1,2,5,6)DD DD Lead Free and Green Devices Available(RoH

 9.4. Size:181K  sino
 sm2215psqg.pdf

SM2211PSQG SM2211PSQG

SM2215PSQGP-Channel Enhancement Mode MOSFETFeatures Pin DescriptionSD -20V/-9.4A,DDRDS(ON) = 19m(max.) @ VGS =-4.5VRDS(ON) = 27m(max.) @ VGS =-2.5VGSPin 1DDRDS(ON) = 45m(max.) @ VGS =-1.8V Super High Dense Cell DesignDFN2x2-6 Reliable and Rugged(1,2,5,6)DD DD Lead Free and Green Devices Available(RoHS Compliant)Applications(3)G Powe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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