All MOSFET. SM2303PSA Datasheet

 

SM2303PSA MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM2303PSA
   Marking Code: B03*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
   Package: SOT23

 SM2303PSA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM2303PSA Datasheet (PDF)

 ..1. Size:256K  sino
 sm2303psa.pdf

SM2303PSA SM2303PSA

SM2303PSAP-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-4A,DRDS(ON) = 56m (max.) @ VGS =-10VSRDS(ON) = 88m (max.) @ VGS =-4.5VG Reliable and RuggedTop View of SOT-23-3 Lead Free and Green Devices Available(RoHS Compliant)DApplicationsG Power Management in Notebook Computer,Portable Equipment and Battery PoweredSSystems.P-Channel MOSFE

 8.1. Size:357K  taiwansemi
 tsm2303cx.pdf

SM2303PSA SM2303PSA

TSM2303 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 180 @ VGS =-10V -1.3 -30 300 @ VGS =-4.5V -1.1 Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Portable Devices High Speed Switch Ordering Info

 8.2. Size:914K  globaltech semi
 gsm2303a.pdf

SM2303PSA SM2303PSA

GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.8A,RDS(ON)=145m@VGS=-10.0V GSM2303A, P-Channel enhancement mode -30V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-res

 8.3. Size:914K  globaltech semi
 gsm2303.pdf

SM2303PSA SM2303PSA

GSM2303 GSM2303 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-3.6A,RDS(ON)=130m@VGS=-10.0V GSM2303, P-Channel enhancement mode -30V/-3.2A,RDS(ON)=170m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist

 8.4. Size:140K  silicon standard
 ssm2303gn.pdf

SM2303PSA SM2303PSA

SSM2303NP-CHANNEL ENHANCEMENT-MODE POWER MOSFETSimple drive requirement BVDSS -30VSmall package outline RDS(ON) 240mDSurface-mount device ID - 1.7ASSOT-23GDescriptionDPower MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, low on-resistance and cost-effectiveness. GSAbsolute Maximum RatingsSymbol Parameter Rating Un

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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