SM3201PSQA MOSFET Datasheet: P-Ch, 30V, 7.9A. Full specification with pinout and replacement list

SM3201PSQA Specs and Replacement

Type Designator: SM3201PSQA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: DFN3X2A-8

SM3201PSQA substitution

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SM3201PSQA datasheet

..1. Size:151K sino
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SM3201PSQA P-Channel Enhancement Mode MOSFET Features Pin Description S5 D6 -30V/-7.9A, D7 RDS(ON) = 27m (max.) @ VGS =-10V D8 G4 RDS(ON) = 42m (max.) @ VGS =-4.5V D3 D2 100% UIS + Rg Tested D1 Reliable and Rugged DFN3x2A-8 Lead Free and Green Devices Available (1, 2, 3, 6, 7,8) (RoHS Compliant) DDDD DD Applications (4)G Power Management in Notebook Computer, ... See More ⇒

9.1. Size:154K sino
sm3202psqa.pdf pdf_icon

SM3202PSQA P-Channel Enhancement Mode MOSFET Features Pin Description -12V/-9.6A, S5 D6 RDS(ON) = 18m (max.) @ VGS =-4.5V D7 RDS(ON) = 25m (max.) @ VGS =-2.5V D8 G4 RDS(ON) = 38m (max.) @ VGS =-1.8V D3 RDS(ON) = 60m (max.) @ VGS =-1.5V D2 D1 100% UIS + Rg Tested DFN3x2A-8 Reliable and Rugged Lead Free and Green Devices Available (1, 2, 3, 6, 7,8) DDDD DD (Ro... See More ⇒

9.2. Size:194K sino
sm3203csq.pdf pdf_icon

SM3203CSQ Dual Enhancement Mode MOSFET (N- and P-Channel) Features Pin Description N Channel D2 D2 20V/8A, D1 RDS(ON) = 18m (max.) @ VGS = 10V D1 G2 RDS(ON) = 22m (max.) @ VGS = 4.5V S2 G1 RDS(ON) = 32.5m (max.) @ VGS = 2.5V S1 RDS(ON) = 65m (max.) @ VGS = 1.8V DFN3x2B-8 P Channel -20V/-4.5A, (8) (7) (6) (5) D1 D1 D2 D2 RDS(ON) = 60m (max.) @ VGS =-4.5... See More ⇒

9.3. Size:2068K huashuo
hsm3206.pdf pdf_icon

HSM3206 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3206 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 6 m gate charge for most of the synchronous buck converter applications. ID 13 A The HSM3206 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab... See More ⇒