SM3337PSQA
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM3337PSQA
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 29.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 32
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 10.6
nS
Cossⓘ -
Output Capacitance: 220
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019
Ohm
Package: DFN3X3A-8
SM3337PSQA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM3337PSQA
Datasheet (PDF)
..1. Size:166K sino
sm3337psqa.pdf
SM3337PSQA P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-32A,DDDDRDS(ON) = 19m(max.) @ VGS =-10VRDS(ON) = 32m(max.) @ VGS =-4.5VGS 100% UIS + Rg TestedSS Reliable and RuggedDFN3x3A-8_EP Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )DDDD ESD protection pass 2KVNote : The diode connected between the gate and
5.1. Size:159K sino
sm3337psqg.pdf
SM3337PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-32A,DDDDRDS(ON) = 19m(max.) @ VGS =-10VRDS(ON) = 32m(max.) @ VGS =-4.5V Reliable and RuggedSGSS Lead Free and Green Devices AvailableDFN3x3D-8_EP (RoHS Compliant) 100% UIS + Rg Tested( 5,6,7,8 )DDDD ESD protection pass 2KVNote : The diode connected between the gate ands
9.1. Size:251K sino
sm3335psqa.pdf
SM3335PSQA P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-39A,DDDDRDS(ON) = 14m (max.) @ VGS =-10VRDS(ON) = 24m (max.) @ VGS =-4.5VGS 100% UIS + Rg TestedSS Reliable and RuggedDFN3x3A-8_EP Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )DDDD ESD protection pass 3KVNote : The diode connected between the gate andsou
9.2. Size:163K sino
sm3331psqg.pdf
SM3331PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-40A,DDDDRDS(ON) = 6.1m(max.) @ VGS =-10VRDS(ON) = 11m(max.) @ VGS =-4.5VG HBM ESD protection level pass 8KV SSS 100% UIS + Rg TestedDFN3.3x3.3-8(Saw-EP) Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )DDDD (RoHS Compliant)Note : The diode connected bet
9.3. Size:160K sino
sm3335psqg.pdf
SM3335PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-39A,DDDDRDS(ON) = 14m(max.) @ VGS =-10VRDS(ON) = 24m(max.) @ VGS =-4.5VSG 100% UIS + Rg TestedSS Reliable and RuggedDFN3x3D-8_EP Lead Free and Green Devices Available (RoHS Compliant)( 5,6,7,8 )DDDD ESD protection pass 3KVNote : The diode connected between the gate ands
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