SM2613PSC MOSFET Datasheet: P-Ch, 20V, 5.6A. Full specification with pinout and replacement list

SM2613PSC Specs and Replacement

Type Designator: SM2613PSC

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.4 nS

Cossⓘ - Output Capacitance: 122 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT23-6

SM2613PSC substitution

- MOSFET ⓘ Cross-Reference Search

SM2613PSC datasheet

..1. Size:263K sino
sm2613psc.pdf pdf_icon

SM2613PSC P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-5.6A , S D RDS(ON)= 45m (Max.) @ VGS=-4.5V D G RDS(ON)= 66m (Max.) @ VGS=-2.5V D D RDS(ON)=104m (Max.) @ VGS=-1.8V 100% UIS + Rg Tested Top View of SOT-23-6 Reliable and Rugged Lead Free and Green Devices Available (1,2,5,6) DD DD (RoHS Compliant) Applications (3)G Power Management in Noteb... See More ⇒

9.1. Size:355K taiwansemi
tsm2611edcx6.pdf pdf_icon

TSM2611ED 20V Dual N-Channel MOSFET w/ESD Protected SOT-26 Pin Definition PRODUCT SUMMARY 1. Source 1 6. Gate 1 VDS (V) RDS(on)(m ) ID (A) 2. Drain 1 5. Drain 2 3. Source 2 4. Gate 2 20 @ VGS = 4.5V 6 20 28 @ VGS = 2.5V 5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On resistance ESD Protected HBM ... See More ⇒

9.2. Size:160K sino
sm2610nsc.pdf pdf_icon

SM2610NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/6.6A, S D RDS(ON)= 21m (max.) @ VGS=10V D G RDS(ON)= 27m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DD DD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered Sys... See More ⇒

9.3. Size:161K sino
sm2612nsc.pdf pdf_icon

SM2612NSC N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5.5A, S D RDS(ON)= 26.5m (max.) @ VGS=10V D G RDS(ON)= 35m (max.) @ VGS=4.5V D D Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-6 (RoHS Compliant) (1,2,5,6) DDDD Applications Power Management in Notebook Computer, (3)G Portable Equipment and Battery Powered Sy... See More ⇒