RFL1N08 Specs and Replacement
Type Designator: RFL1N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 8.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO205AF
RFL1N08 substitution
RFL1N08 datasheet
rfl1n10l.pdf
RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel September 1998 Power MOSFET Features Description 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic rDS(ON) = 1.200 level (5V) driving sources in applications such as program- mable controllers, automotive switching, and solenoid driv- ers. Thi... See More ⇒
Detailed specifications: SM8403CSQ , SM8404CSQ , SM8404CSQA , SM4603CSK , SM4901CSK , SM6041CSK , SM6043CSQ , SM7308CSKP , 50N06 , RFL1N10 , RFL1N18 , RFL1N18L , RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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