RFL1N08 MOSFET. Datasheet pdf. Equivalent
Type Designator: RFL1N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 8.33 W
Maximum Drain-Source Voltage |Vds|: 80 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 1 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 80 pF
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: TO205AF
RFL1N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RFL1N08 Datasheet (PDF)
1.1. rfl1n08 rfl1n10.pdf 
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5.2. rfl1n18 rfl1n20.pdf Size:90K _njs
5.3. rfl1n10l.pdf Size:33K _intersil
RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel September 1998 Power MOSFET Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic • rDS(ON) = 1.200Ω level (5V) driving sources in applications such as program- mable controllers, automotive switching, and solenoid driv- ers. Thi
Datasheet: SM8403CSQ , SM8404CSQ , SM8404CSQA , SM4603CSK , SM4901CSK , SM6041CSK , SM6043CSQ , SM7308CSKP , IRF640 , RFL1N10 , RFL1N18 , RFL1N18L , RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 .
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