All MOSFET. RFL1N08 Datasheet

 

RFL1N08 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFL1N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 8.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO205AF

 RFL1N08 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFL1N08 Datasheet (PDF)

 ..1. Size:87K  njs
 rfl1n08 rfl1n10.pdf

RFL1N08 RFL1N08

 9.1. Size:87K  njs
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RFL1N08 RFL1N08

 9.2. Size:90K  njs
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RFL1N08 RFL1N08

 9.3. Size:33K  intersil
 rfl1n10l.pdf

RFL1N08 RFL1N08

RFL1N10L1A, 100V, 1.200 Ohm, Logic Level, N-ChannelSeptember 1998 Power MOSFETFeatures Description 1A, 100V This is an N-Channel enhancement mode silicon gate powerfield effect transistor specifically designed for use with logic rDS(ON) = 1.200level (5V) driving sources in applications such as program-mable controllers, automotive switching, and solenoid driv-ers. Thi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RSQ015P10

 

 
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