RFL1N10 Datasheet and Replacement
Type Designator: RFL1N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 8.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO205AF
RFL1N10 substitution
RFL1N10 Datasheet (PDF)
rfl1n10l.pdf
RFL1N10L1A, 100V, 1.200 Ohm, Logic Level, N-ChannelSeptember 1998 Power MOSFETFeatures Description 1A, 100V This is an N-Channel enhancement mode silicon gate powerfield effect transistor specifically designed for use with logic rDS(ON) = 1.200level (5V) driving sources in applications such as program-mable controllers, automotive switching, and solenoid driv-ers. Thi
Datasheet: SM8404CSQ , SM8404CSQA , SM4603CSK , SM4901CSK , SM6041CSK , SM6043CSQ , SM7308CSKP , RFL1N08 , IRF640 , RFL1N18 , RFL1N18L , RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L .
History: HSU3014 | QM2429S | 2SK242 | SVT078R0ND
Keywords - RFL1N10 MOSFET datasheet
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History: HSU3014 | QM2429S | 2SK242 | SVT078R0ND
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