RFL1N20L MOSFET Datasheet: N-Ch, 200V, 1A. Full specification with pinout and replacement list

RFL1N20L Specs and Replacement

   Type Designator: RFL1N20L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 8.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm
   Package: TO205AF

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RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel September 1998 Power MOSFET Features Description 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic rDS(ON) = 1.200 level (5V) driving sources in applications such as program- mable controllers, automotive switching, and solenoid driv- ers. Thi... See More ⇒

Detailed specifications: SM6041CSK , SM6043CSQ , SM7308CSKP , RFL1N08 , RFL1N10 , RFL1N18 , RFL1N18L , RFL1N20 , IRLZ44N , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , RFL1P10 , RFP2N18L , AP9916H .