RFL1N20L Datasheet and Replacement
Type Designator: RFL1N20L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 8.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm
Package: TO205AF
RFL1N20L Datasheet (PDF)
rfl1n10l.pdf

RFL1N10L1A, 100V, 1.200 Ohm, Logic Level, N-ChannelSeptember 1998 Power MOSFETFeatures Description 1A, 100V This is an N-Channel enhancement mode silicon gate powerfield effect transistor specifically designed for use with logic rDS(ON) = 1.200level (5V) driving sources in applications such as program-mable controllers, automotive switching, and solenoid driv-ers. Thi
Datasheet: SM6041CSK , SM6043CSQ , SM7308CSKP , RFL1N08 , RFL1N10 , RFL1N18 , RFL1N18L , RFL1N20 , IRFP260N , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , RFL1P10 , RFP2N18L , AP9916H .
History: IXFN44N60
Keywords - RFL1N20L MOSFET datasheet
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History: IXFN44N60



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