RFL1N20L MOSFET. Datasheet pdf. Equivalent
Type Designator: RFL1N20L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 8.33 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 1 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 60 pF
Maximum Drain-Source On-State Resistance (Rds): 3.65 Ohm
Package: TO205AF
RFL1N20L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RFL1N20L Datasheet (PDF)
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Size:87K _njs
3.1. rfl1n18_rfl1n20.pdf Size:90K _njs
5.1. rfl1n08_rfl1n10.pdf Size:87K _njs
5.2. rfl1n10l.pdf Size:33K _intersil
RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel September 1998 Power MOSFET Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic • rDS(ON) = 1.200Ω level (5V) driving sources in applications such as program- mable controllers, automotive switching, and solenoid driv- ers. Thi
Datasheet: SM6041CSK , SM6043CSQ , SM7308CSKP , RFL1N08 , RFL1N10 , RFL1N18 , RFL1N18L , RFL1N20 , IRFZ46N , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , RFL1P10 , RFP2N18L , AP9916H .
