All MOSFET. RFL2N06 Datasheet

 

RFL2N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: RFL2N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 8.33 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 14 nS

Drain-Source Capacitance (Cd): 85 pF

Maximum Drain-Source On-State Resistance (Rds): 0.95 Ohm

Package: TO205AF

RFL2N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFL2N06 Datasheet (PDF)

1.1. rfl2n05l_rfl2n06l_rfp4n05l_rfp4n06l.pdf Size:255K _njs

RFL2N06
RFL2N06



4.1. rfl2n05_rlf2n06.pdf Size:89K _njs

RFL2N06
RFL2N06



Datasheet: RFL1N08 , RFL1N10 , RFL1N18 , RFL1N18L , RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , IRF3710 , RFL2N06L , RFL1P08 , RFL1P10 , RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J .

 


RFL2N06
  RFL2N06
  RFL2N06
  RFL2N06
 
RFL2N06
  RFL2N06
  RFL2N06
  RFL2N06
 

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