SSM70T03H Datasheet and Replacement
Type Designator: SSM70T03H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 53 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 245 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: TO252
SSM70T03H substitution
SSM70T03H Datasheet (PDF)
ssm70t03h-j.pdf

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ssm70t03gh ssm70t03gj.pdf

SSM70T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM70T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 9msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 60AD The SSM70T03GH is in a TO-252 package, which isPb-free; RoHS-
ssm7002egu.pdf

SSM7002EGUN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002EGU acheives fast switching performanceBVDSS50Vwith low gate charge without a complex drive circuit. ItRDS(ON) 3is suitable for low voltage applications such as smallconverters and general load-switching circuits.ID 250mAThe SSM7002EGU is supplied in a RoHS-compliantPb-free; RoHS-
ssm7002kgen.pdf

SSM7002KGENN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM7002KGEN acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 2is suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 640mAD The SSM7002KGEN is supplied in an RoHS-compliantPb-free; R
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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