IPF06N03LA Datasheet and Replacement
Type Designator: IPF06N03LA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 800 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO252
IPF06N03LA substitution
IPF06N03LA Datasheet (PDF)
ipd06n03la ipf06n03la ips06n03la ipu06n03la.pdf

IPD06N03LA IPF06N03LAIPS06N03LA IPU06N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C
ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very lo
ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf

Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
Datasheet: SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 , 2SK1202 , IPD06N03LA , IPU06N03LA , IPS06N03LA , 12N60 , IXFT50N50P3 , IXFQ50N50P3 , IXFH50N50P3 , APM2510NU , IRF7832Z , 2SK2222 , MDF11N65B , MMIS60R580P .
Keywords - IPF06N03LA MOSFET datasheet
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History: FRK460H | SIHFD123



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