IXFT50N50P3 PDF and Equivalents Search

 

IXFT50N50P3 Specs and Replacement

Type Designator: IXFT50N50P3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 960 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO268

IXFT50N50P3 substitution

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IXFT50N50P3 datasheet

 ..1. Size:139K  ixys
 ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf pdf_icon

IXFT50N50P3

Polar3TM HiperFETTM VDSS = 500V IXFT50N50P3 ID25 = 50A Power MOSFET IXFQ50N50P3 RDS(on) 125m IXFH50N50P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C, RGS = 1M 500 V D... See More ⇒

 7.1. Size:104K  ixys
 ixfh42n20 ixfm42n20 ixfh58n20 ixfm58n20 ixft50n20 ixfh50n20 ixfm50n20 ixft58n20.pdf pdf_icon

IXFT50N50P3

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs 200 V 42 A 60mW IXFH/IXFM42N20 200 V 50 A 45mW IXFH/IXFM/IXFT50N20 200 V 58 A 40mW IXFH/IXFT58N20 N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V TO-268 (D3) Case Style VG... See More ⇒

 7.2. Size:294K  ixys
 ixft50n85xhv ixfh50n85x ixfk50n85x.pdf pdf_icon

IXFT50N50P3

X-Class HiPerFETTM VDSS = 850V IXFT50N85XHV Power MOSFET ID25 = 50A IXFH50N85X RDS(on) 105m IXFK50N85X TO-268HV (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 150 C 850 V VDGR TJ = 25 C to 150 C, RGS = 1M 850 V VGSS Co... See More ⇒

 7.3. Size:102K  ixys
 ixft50n20.pdf pdf_icon

IXFT50N50P3

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs 200 V 42 A 60mW IXFH/IXFM42N20 200 V 50 A 45mW IXFH/IXFM/IXFT50N20 200 V 58 A 40mW IXFH/IXFT58N20 N-Channel Enhancement Mode trr 200 ns High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 200 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 200 V TO-268 (D3) Case Style VG... See More ⇒

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Detailed specifications: IRF630MFP, IRFD123, SIHFD123, 2SK1202, IPD06N03LA, IPU06N03LA, IPS06N03LA, IPF06N03LA, 2N7002, IXFQ50N50P3, IXFH50N50P3, APM2510NU, IRF7832Z, 2SK2222, MDF11N65B, MMIS60R580P, 2SK3435

Keywords - IXFT50N50P3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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