All MOSFET. SPB80N08S2L Datasheet

 

SPB80N08S2L Datasheet and Replacement


   Type Designator: SPB80N08S2L
   Marking Code: 2N08L07
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 3.3 nC
   tr ⓘ - Rise Time: 81 nS
   Cossⓘ - Output Capacitance: 993 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
   Package: TO263
 

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SPB80N08S2L Datasheet (PDF)

 ..1. Size:314K  infineon
 spp80n08s2l spb80n08s2l.pdf pdf_icon

SPB80N08S2L

SPP80N08S2L-07SPB80N08S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.8 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N08S2L-07 P- TO220 -3-1 Q67060-S60152N08L07SPB80N08S2L-

 7.1. Size:208K  1
 spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf pdf_icon

SPB80N08S2L

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 7.2. Size:345K  infineon
 spp80n06s2-05 spb80n06s2-05.pdf pdf_icon

SPB80N08S2L

www.DataSheet4U.com SPP80N06S2-05SPB80N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS 55 V N-ChannelRDS(on) max. SMD version 4.8 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-05 P- TO220 -3-1 Q67040-S42452N0605SPB80N06S2-05

 7.3. Size:311K  infineon
 spp80n06s2l-09 spb80n06s2l-09.pdf pdf_icon

SPB80N08S2L

SPP80N06S2L-09SPB80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8.5 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-09 P- TO220 -3-1 Q67060-S60312N06L09SPB80N06S2L-09 P- TO263 -3-2

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Datasheet: ME60N03A , NE5520279A , NTE458 , PHB55N03LTA , PHD55N03LTA , PHP55N03LTA , QM3006D , SI4340DY , 2N60 , SPP80N08S2L , STK630F , TSF8N60M , TSP8N60M , UTC50N06L , STK0460F , FMH23N50E , FMV23N50E .

History: WSP6064 | RU6H5L | BUK7614-30 | CED6601 | STS2601 | CED4311 | FRK254D

Keywords - SPB80N08S2L MOSFET datasheet

 SPB80N08S2L cross reference
 SPB80N08S2L equivalent finder
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 SPB80N08S2L replacement

 

 
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