SVF2N60M MOSFET Datasheet: N-Ch, 600V, 2A. Full specification with pinout and replacement list

SVF2N60M Specs and Replacement

Type Designator: SVF2N60M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23.4 nS

Cossⓘ - Output Capacitance: 35.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm

Package: TO251

SVF2N60M substitution

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SVF2N60M datasheet

..1. Size:692K silan
svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf pdf_icon

SVF2N60M(MJ)(NF)(F)(D) 2A 600V N 2 SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 1 2 3 3 TO-126F-3L ... See More ⇒

..2. Size:600K silan
svf2n60m svf2n60mj svf2n60n svf2n60f svf2n60t svf2n60d.pdf pdf_icon

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..3. Size:519K silan
svf2n60m svf2n60mj svf2n60n svf2n60nf svf2n60f svf2n60t svf2n60d.pdf pdf_icon

SVF2N60M/MJ/N/NF/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode 1 3 TO-252-2L power MOS field effect transistor which is produced using Silan 1 proprietary F-CellTM structure VDMOS technology. The improved 3 1 process and cell structure have been especially tailored to minimize 2 3 1.Gate 2.Dra... See More ⇒

..4. Size:624K silan
svf2n60m svf2n60f svf2n60t svf2n60d.pdf pdf_icon

SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s... See More ⇒