HFP15N06 PDF and Equivalents Search

 

HFP15N06 Specs and Replacement

Type Designator: HFP15N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 160 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO220

HFP15N06 substitution

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HFP15N06 datasheet

 ..1. Size:356K  shantou-huashan
hfp15n06.pdf pdf_icon

HFP15N06

Shantou Huashan Electronic Devices Co.,Ltd. HFP15N06 N-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 15A, 60V(See Note), RDS(on) ... See More ⇒

 9.1. Size:1470K  vishay
irfp150 sihfp150.pdf pdf_icon

HFP15N06

IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.055 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 175 C Operating Temperature COMPLIANT Qgs (nC) 29 Fast Switching Qgd (nC) 68 Ease of Paralleling Configuration Single S... See More ⇒

 9.2. Size:1476K  vishay
sihfp150.pdf pdf_icon

HFP15N06

IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 100 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.055 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 175 C Operating Temperature COMPLIANT Qgs (nC) 29 Fast Switching Qgd (nC) 68 Ease of Paralleling Configuration Single S... See More ⇒

Detailed specifications: HFF640, HFF7N60, HFH12N60, HFH20N50, HFH7N60, HFH9N90, HFP13N10, HFP13N50, IRF730, HFP17N10, HFP2N60, HFP30N06, HFP45N06, HFP4N60, HFP4N65, HFP50N06, HFP50N06V

Keywords - HFP15N06 MOSFET specs

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